A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli, Michele; Liempd, Chris van; Boni, Andrea; Stanzione, Stefano

doi:10.1002/cta.2986

Cited by 14 publications

(6 citation statements)

References 55 publications

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“…5(a). As for the source voltage V S , the lower reference voltage V G0 is generated by a linear regulator embedding an ultralow-power voltage reference [16], [17], while the higher voltage is provided by a noninverting amplifier, based on the same nanopower opamp used for the TIA. As shown in Fig.…”

Section: Sensor Interface Circuit and Wireless Linkmentioning

confidence: 99%

A Wireless Biosensor Node for In Vivo and Real-Time Plant Monitoring in Precision Agriculture

Caselli,

Graiani,

Bianchi

et al. 2024

IEEE Trans. Agri. Elect.

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This article presents a wireless biosensor based on an organic electrochemical transistor, a low-power electronic system, with narrow band (NB)-Internet of Things (IoT)/Cat-M1 radio interface, and server with web interface. The biosensor, implanted in the plant stem, allows the in vivo evaluation of the concentration of nutrients dissolved as cations in the sap. The electronic circuit enables the real-time monitoring of the plant in the crop. The NB-IoT or Cat-M1 link, both available in the system-in-package device selected for the proposed system, ensures almost ubiquitous availability of the network link, without severe limitations on the data payload. The server stores in cloud the data obtained from the field, and a web interface enables the remote monitoring of the plant physiological mechanisms, with consumer devices, such as laptops or smartphones. The low power consumption of the biosensor allows more than three months of battery lifetime, adequate for most seasonal crops. With duty-cycle approach, more than one year of lifetime can be obtained for perennial crops, such as vineyards and orchards. Measurements on KCl solutions showed adequate sensor linearity up to 10-mM K + concentration, while those performed on a sap of kiwi vines are in agreement with data available in the literature. In vivo measurements carried out on cabbage show how the parameters of the sensor are affected by the circadian cycle. In day time, a reduction of cation concentration, due to water absorption for the photosynthesis and stomatal transpiration, is detected by the wireless-bioristor.

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Section: Sensor Interface Circuit and Wireless Linkmentioning

confidence: 99%

A Wireless Biosensor Node for In Vivo and Real-Time Plant Monitoring in Precision Agriculture

Caselli,

Graiani,

Bianchi

et al. 2024

IEEE Trans. Agri. Elect.

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“…where W (x) is the Lambert W function solving the equation y • exp(y) = x [11], v th the thermal voltage, n the slope factor, and I c0 the equivalent current of M C with its source connected to ground. At the end of the MAC computation, the SL voltage (corresponding to V M AC ) is:…”

Section: F-2t2r: a Novel Cell For Tia-less And Highly Parallel Rram-b...mentioning

confidence: 99%

Boosting RRAM-Based Mixed-Signal Accelerators in FD-SOI Technology for ML Applications

Boni,

Malena,

Saccani

et al. 2023

IEEE J. Explor. Solid-State Comput. Devices Circuits

Self Cite

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This paper presents the Flipped (F)-2T2R RRAM compute cell enhancing the performance of RRAM-based mixedsignal accelerators for deep neural networks (DNNs) in machine learning (ML) applications. The F-2T2R cell is designed to exploit the features of the FD-SOI technology and it achieves a large increase in cell output impedance, compared to the standard 1T1R cell. The paper also describes the modelling of an F-2T2Rbased accelerator and its transistor-level implementation in a 22nm FD-SOI technology. The modelling results and the accelerator performance are validated by simulation. The proposed design can achieve an energy efficiency of up to 1260 1b-TOPS/W, with a memory array of 256 rows and columns. From the results of our analytical framework, a ResNet18, mapped on the accelerator, can obtain an accuracy reduction below 2%, with respect to the floating point baseline, on the CIFAR-10 dataset.

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“…Various transistors, such as Bipolar Junction Transistors (BJT), Metal‐Oxide‐Semiconductor Field Effect Transistors (MOSFET) and Organic Field Effect Transistors (OFET), can be used to implement voltage references 2,3 . Bandgap voltage references (BGRs) usually need high supply voltage, and their power consumption is usually in the μW range or above 4 . A solution to reduce supply voltage and power consumption is to replace BJT transistors with MOSFETs in the subthreshold region for temperature compensation.…”

Section: Introductionmentioning

confidence: 99%

pMOS‐only pW‐power voltage reference with sub‐10 ppm/°C trimmed temperature coefficient and sub‐100 ppm/V line sensitivity

Azimi

Habibi

Crovetti

2023

Circuit Theory & Apps

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In this paper, a new ultra-low-power voltage reference based on a two-stage, all-pMOS topology operating in the subthreshold region is proposed to uniquely meet the pW-power range power consumption requirements of emerging Internet-of-Things applications without significantly compromising the temperature coefficient (TC) and the line sensitivity (LS) performance. The proposed circuit consists of the LS regulator, TC corrector, and TC trimming sections. Based on post-layout Monte Carlo simulations in 180-nm CMOS, the proposed circuit operates with 0.8-to 2.4-V supply potential and generates a reference voltage of 206 mV with a process spread of 7.8%, achieving an average calibrated TC of 4.4 ppm/ C in the temperature range of À20 C to 80 C, and an average LS of 51.5 ppm/V with a power consumption of 25.9 pW at 25 C (469.1 pW at 80 C).

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A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Cited by 14 publications

References 55 publications

A Wireless Biosensor Node for In Vivo and Real-Time Plant Monitoring in Precision Agriculture

A Wireless Biosensor Node for In Vivo and Real-Time Plant Monitoring in Precision Agriculture

Boosting RRAM-Based Mixed-Signal Accelerators in FD-SOI Technology for ML Applications

pMOS‐only pW‐power voltage reference with sub‐10 ppm/°C trimmed temperature coefficient and sub‐100 ppm/V line sensitivity

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