A low-power programming technique for polysilicon fuses

Abstract

A new programming technique for polysilicon resistor fuses using low input electrical power has been demonstrated. In contrast to the conventional technique which programs fuses in the air at atmospheric pressure, the new technique is to program fuses in a low-pressure gas ambient. Removal of the entire passivation layers over the fuses is not necessary thus avoiding the contamination problem.

Wide gap semiconductor microwave devices

“…Group-III nitride semiconductors and heterostructures have been recognized as belonging to the most promising materials for high-temperature high-power high-electron mobility transistors (HEMTs) [4,5,[89][90][91][92][93][94][95][96][97][98], optoelectronic devices in the short wavelength region (photodetectors and LEDs) [99][100][101][102][103][104][105][106][107], monolithic microwave and optoelectronic integrated circuits [108][109][110][111][112][113][114][115][116][117], heterojunction FETs, MIS-HFETs, MOSFETs , microwave, heterojunction and switched diodes (heterodiodes) [130][131][132][133][134][135][136][137], lasers [109,[138][139][140], as well as other devices, which will have a great impact on the future world [140]. The superior physical and chemical stability of the nitride semiconductors will enable them to operate in harsh en...…”

“…For SiC, a possible heterojunction is the GaN/SiC n-p junction [134]. As the heterojunction can improve the performance considerably for LEDs, laser diodes, as well as HBTs and HFETs, extensive investigations of GaN/SiC and AlGaN/SiC heterodiodes [128][129][130][131][132][133][134][135][136][137], grown with different growth techniques, are carried out (table 9 [135]). The ideality factors in such diodes for different temperatures are summarized in table 10 [134].…”

“…The GaN HEMTs can operate up to 12 W mm −1 at 10 GHz [129] with f T = 10 GHz and f max = 155 GHz [131]. Power density as high as 32.2 W mm −1 at 4 GHz from an AlGaN/AlN/GaN HEMT on a SiC substrate has also been reported [130]. The superior thermal properties of GaN have resulted in the realization of heterojunction FETs operating up to 750 • C [142].…”

“…Power densities as high as 30 W mm −1 at 2 GHz and 10 W m −1 at 8 GHz have been demonstrated [130,131]. Reliable, low-resistance ohmic contacts to the AlGaN/GaN HEMT structure are essential for efficient operation.…”

“…Reliable, low-resistance ohmic contacts to the AlGaN/GaN HEMT structure are essential for efficient operation. Ohmic contact processing is still a challenging area in the AlGaN/GaN device technology [118,[128][129][130][131][132].…”