A low-power UHF differential LNA in 0.35-μm SOI CMOS

A highly‐integrated switchable dual‐mode low‐noise amplifier (LNA) is proposed and implemented in standard 0.18 μm complementary metal‐oxide‐semiconductor (CMOS) technology for ultra‐high frequency‐radio‐frequency identification (UHF RFID) reader receivers. This dual‐mode LNA can be controlled to operate in two different modes in order to meet the requirements for the listen‐before‐talk mode and the normal mode of the UHF RFID reader receiver, respectively. The fully‐differential common‐source cascode topology with perfect input impedance matching, capacitive cross‐coupling, and common‐mode feedback techniques are employed to improve its performance. Measurement results show that, from a single power supply of 1.8 V, the LNA achieved the power gain (S21) of 9.1 dB, the input power reflection (S11) of −20 dB, the minimum noise figure (NF) of 3.6 dB, and the P1dB of −5 dBm in high‐gain mode. In high‐linearity mode, S21 of 3.2 dB, S11 of −17 dB, NF of 5.2 dB, and P1dB of −1.3 dBm were obtained.

show abstract

A switchable dual‐mode fully‐differential common‐source low‐noise amplifier in 0.18‐μm CMOS technology

Zhang

Wang

Gao

et al. 2019

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

UHF RF Front-End Circuits in 0.35-μm Silicon on Insulator (SOI) CMOS

Zencir

Huang

Tekin

et al. 2005

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

In this work, design and measurement results of UHF RF frontend circuits to be used in low-IF and subsampling receiver architectures are presented. We report on three low noise amplifiers (LNA) (i) single-ended (ii) differential (iii) high-gain differential and a double-balanced mixer all implemented in 0.35-µm SOI (Silicon on Insulator) CMOS technology of Honeywell. These circuits are considered as candidate low-power building blocks to be used in the two fully-integrated receiver chips targeted for deep space communications. Characteristics of square spiral inductors with high quality (Q) factors (as high as 10.8) in SOI CMOS are reported. Single-ended and fully-differential LNA's provide gains of 17.5 dB and 18.74 dB at 435 MHz, respectively. Noise figure of the single-ended LNA is 2.91 dB while the differential LNA's noise figure is 3.25 dB. These results were obtained for the power dissipations of 12.5 mW and 16.5 mW from a 2.5-V supply for the single-ended and differential LNA's, respectively. High-gain low-power differential LNA provides a small-signal gain of 45.6 dB with a noise figure of 2.4 dB at 435 MHz. Total power dissipation of the high gain LNA is 28 mW from a 3.3-V supply. The double-balanced mixer provides a conversion gain of 5.5 dB with a noise figure of 13 dB at 2 MHz IF. The power dissipation of the mixer is 11.5 mW from a 2.5-V supply. The measured responses and the power dissipations of the building blocks meet the requirements of the communications system. The die areas occupied by the single-ended LNA, differential LNA, high-gain LNA and the mixer are 0.6 mm × 1.4 mm, 1 mm × 1.4 mm, 1.4 mm × 1.2 mm and 0.6 mm × 0.9 mm, respectively.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A low-power UHF differential LNA in 0.35-μm SOI CMOS

Cited by 2 publications

References 5 publications

A switchable dual‐mode fully‐differential common‐source low‐noise amplifier in 0.18‐μm CMOS technology

A switchable dual‐mode fully‐differential common‐source low‐noise amplifier in 0.18‐μm CMOS technology

UHF RF Front-End Circuits in 0.35-μm Silicon on Insulator (SOI) CMOS

Contact Info

Product

Resources

About