A Low-Power Voltage Reference Cell with a 1.5 V Output

Navidi, Mir Mohammad; Graham, David

doi:10.3390/jlpea8020019

Cited by 6 publications

(2 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because the current is limited to very small, it can be seen that the resistor not only costs more mask layers in manufacturing but also occupies more chip area. In addition, some designs associate the different types of transistors [1,18,19], generating an output proportional to the difference of two threshold values (V T1 − V T2 ). Although this technique can significantly reduce the supply voltage, it also requires the use of more masks and increases the process variations.…”

Section: Introductionmentioning

confidence: 99%

A Sub-1-V Nanopower MOS-Only Voltage Reference

Wang,

Lu,

et al. 2024

JLPEA

View full text Add to dashboard Cite

A novel low-power MOS-only voltage reference is presented. The Enz–Krummenacher–Vittoz (EKV) model is adopted to provide a new perspective on the operating principle. The normalized charge density, introduced as a new variable, serves as an indicator when trimming the output temperature coefficient. The proposed voltage reference consists of a specific current generator and a 5-bit trimmable load. Thanks to the good match between the current source stage and the output stage, the nonlinear temperature dependence of carrier mobility is automatically canceled out. The circuit is designed using 55 nm COMS technology. The operating temperature ranges from −40 °C to 120 °C. The average temperature coefficient of the output voltage can be reduced to 21.7 ppm/°C by trimming. The power consumption is only 23.2 nW with a supply voltage of 0.8 V. The line sensitivity and the power supply rejection ratio at 100 Hz are 0.011 %/V and −89 dB, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

A Sub-1-V Nanopower MOS-Only Voltage Reference

Wang,

Lu,

et al. 2024

JLPEA

View full text Add to dashboard Cite

show abstract

“…Other compensation methods, such as VBE linearization [8,9], temperature-dependent resistor ratio compensation [10], resistor-less, successive voltage step compensation [11], base current compensation [12], subthreshold compensation [13], and so on. However, some of these compensations rely upon the matching of transistor [3,14,15], resistor [3], the high beta bipolar [7], process stability or power supply voltage, etc. Reference [3,5] has no trimming, but its output variation range is large, which is not suitable for high precision measurement.…”

Section: Introductionmentioning

confidence: 99%

A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar

et al. 2019

View full text Add to dashboard Cite

Traditional bandgap reference (BGR) is sensitive to process variation and is not suitable for mass production. Consequently, a stacked piece-wise compensated bandgap reference (SPWBGR) with low beta bipolar is proposed, designed and fabricated in the 0.18 μm high-voltage (HV) BCD process. Two stacked BGR (SBGR) cores make up the proposed BGR circuit. Through setting the target reference voltage near the output voltage of SBGR cores, the feedback resistor ratio is reduced and the base current side-effect is significantly decreased. Notably, the SBGR core is implemented by the low beta npn bipolar and it relaxes the requirement for the high beta bipolar. The two SBGR cores are almost identical except for the temperature slope and feedback ratio. The two cores have different zero temperature coefficient (TC) points, one is set at −5 °C, and the other is set at 60 °C, named as SBGRA and SBGRB, respectively. The SBGRA and SBGRB output the same voltage at their zero TC point. The higher voltage of SBGRA and SBGRB is the output voltage. Through the process of tracking the maximum value of different SBGR cores, the proposed SPWBGR achieves 2.6 ppm/°C TC from −40 to 100 °C. As a result, the average TC for five random samples is 5.3 ppm/°C. The line regulation is 2 mV/V from 4.5 to 5.5 V power supply. The current consumption is 6.8 µA. The active area of the proposed BGR is 0.075 mm2.

show abstract

All–MOS self-powered subthreshold voltage reference with enhanced line regulation

Aminzadeh

2020

AEU - International Journal of Electronics and Communications

View full text Add to dashboard Cite

A Low-Power Voltage Reference Cell with a 1.5 V Output

Cited by 6 publications

References 24 publications

A Sub-1-V Nanopower MOS-Only Voltage Reference

A Sub-1-V Nanopower MOS-Only Voltage Reference

A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar

All–MOS self-powered subthreshold voltage reference with enhanced line regulation

Contact Info

Product

Resources

About