A low ripple fully integrated charge pump regulator

Soldera, J.; Boas, A. Vilas; Olmos, Alfredo

doi:10.1109/sbcci.2003.1232825

Cited by 8 publications

(5 citation statements)

References 5 publications

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“…When compared to Refs. [1,4,5], the proposed charge pump can supply more load current, and the output ripple is comparable with Ref. [1], although the peak efficiency is slightly lower than Ref.…”

Section: Experimental Results and Microphotographmentioning

confidence: 79%

A multi-mode low ripple charge pump with active regulation

Ye¹,

Xinquan²,

Xu³

et al. 2009

J. Semicond.

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In order to improve efficiency and reduce the output ripple, a novel multi-mode charge pump is presented. The proposed charge pump includes dual-loop regulation topology-skip and linear modes. It consumes low quiescent current in skip mode for light loads, and produces low ripple in linear mode for heavy loads, which closes the gap between linear mode and skip mode with active regulation; a multi-mode charge pump employing the technique has been implemented in the UMC 0.6-μm-BCD process. The results indicate that the charge pump works well and effectively; it has low ripple with special regulation, and minimizes the size of the capacitance, then decreases the area of the PCB board. The adjustable output of the positive charge pump is 10–30 V, and the maximum output ripple is 100 mV when the load current is 200 mA. The line regulation is 0.2%/V, and load regulation is 0.075%.

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Section: Experimental Results and Microphotographmentioning

confidence: 79%

A multi-mode low ripple charge pump with active regulation

Ye¹,

Xinquan²,

Xu³

et al. 2009

J. Semicond.

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show abstract

“…Thus, sizing S 0 and S 1 transistors following the result given by (27) is possible to implement a TPVD circuit where R ds0 = R ds1 . Following the same equality R ds criteria for S 2 and S 3 transistors it must be verified that …”

Section: Discharging Of C L During Charging Phase (Ii)mentioning

confidence: 99%

“…It can be easily seen from Fig. 7 that the only way of accomplish the hardware requirements fixed by the driving system for these concrete application parameters is sizing the S 1 switching transistor of the TPVD structure with a value W 1 greater than 25,000 lm and once get this result, the size of the other transistors can be easily found just applying (27) and (30).…”

Section: -Stage Tpvd Circuit and Driving Systemmentioning

confidence: 99%

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Charge pump design for high-voltage biasing applications in piezoelectric-based miniaturized robots

Saiz-Vela

Miribel-Català

Colomer

et al. 2008

Analog Integr Circ Sig Process

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Fully autonomous piezoelectric-based miniaturized robots usually have a high-voltage biasing system that provides the required voltage levels to drive properly their piezoelectric actuators. In this paper a novel on-board biasing system based on the cascade connection of three full-custom charge pump ICs is presented. Simulated and experimental results show that the proposed biasing system is capable to obtain a regulated output voltage up to 20 V from a 3.3 V battery and deliver successfully up to 120 mW of power. Moreover, a novel approach in the steady-state analysis of the two-phase voltage doubler (which is the core of the designed charge pump IC) has been developed in order to have a tool capable to provide a full understanding of the steady-state voltage doubler's behavior while at the same time accelerate and simplify the design process of such circuit. Simulated results show that the proposed mathematical model is more accurate than already developed models. The design of the charge pump IC has been implemented using a commercial 0.7 lm Bipolar-CMOS-DMOS (BCD) technology.

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“…To further reduce output ripple voltage, the proposed charge pump also exploits the automatic pumping frequency control scheme that has been developed in previous works [9], [10]. In (1), the switching frequency of the charge pump is related to the output ripple voltage.…”

Section: B Automatic Pumping Frequency Control Schemementioning

confidence: 99%

A Regulated Charge Pump With Small Ripple Voltage and Fast Start-Up

Lee

Kim

Song

et al. 2006

IEEE J. Solid-State Circuits

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Abstract-A regulated charge pump circuit is realized in a 3.3-V 0.13-m CMOS technology. The charge pump exploits an automatic pumping control scheme to provide small ripple output voltage and fast start-up by decoupling output ripple and start-up time.The automatic pumping control scheme is composed of two schemes, an automatic pumping current control scheme and an automatic pumping frequency control scheme.

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A low ripple fully integrated charge pump regulator

Cited by 8 publications

References 5 publications

A multi-mode low ripple charge pump with active regulation

A multi-mode low ripple charge pump with active regulation

Charge pump design for high-voltage biasing applications in piezoelectric-based miniaturized robots

A Regulated Charge Pump With Small Ripple Voltage and Fast Start-Up

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