A paste containing CuO particles and polyethylene glycol 1000 as a reducing solvent has been applied to joining pure Cu in electronic applications, and the bondability of the joints and bonding mechanism were investigated. Based on a combination of thermogravimetric and differential thermal analysis, pressurization in the bonding process was determined to be started at temperatures near the exothermal peak of 320°C. Pressurization started at a temperature of 320°C, with the 11 MPa shear strength of the Cu-to-Cu joint being 2.4 times greater than a joint pressed at room temperature. During the bonding process, CuO particles were not directly reduced to Cu, but were instead first reduced to Cu 2 O nanoparticles, which were subsequently reduced to Cu nanoparticles, and an oxide film of a Cu substrate was also reduced, thus ensuring a direct connection between a sintered Cu layer and substrate. The shear strength increases with holding time. Moreover, the shear strength of a joint created with CuO paste and a holding time of 15 min (20 MPa) is in fact higher than what can be achieved using a conventional lead-rich Pb-5Sn solder, thus making it well-suited for use in electronic applications.