A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices

Aimaganbetov, Kazybek; Aldiyarov, A.U.; Zhantuarov, Sultan; Almasov, N. Zh.; Теруков, Е. И.; Tokmoldin, Nurlan

doi:10.1134/s0020441221050146

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…The applied voltage was varied from −0.1 V to 0.7 V at room temperature. The measurements were performed in a homemade measuring cell based on a Cryomech Model ST15 Cryostat microcryogenic machine specially designed to study the electrophysical properties of semiconductor devices at low temperatures [32,33]. The developed experimental cell allowed us to carry out electrophysical measurements in different temperature ranges.…”

Section: Methodsmentioning

confidence: 99%

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

Aimaganbetov,

Yerezhep,

Kishkenebayev

et al. 2024

Micromachines

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Impedance spectroscopy provides relevant knowledge on the recombination and extraction of photogenerated charge carriers in various types of photovoltaic devices. In particular, this method is of great benefit to the study of crystalline silicon (c-Si)-based solar cells, a market-dominating commercial technology, for example, in terms of the comparison of various types of c-Si devices. This study investigates the dark and light electrophysical characteristics of a heterojunction silicon solar cell fabricated using plasma-enhanced chemical vapor deposition. The measurements are performed at various applied biases, enabling the determination of complex resistance, characteristic time, capacitive response and impurity concentration within the semiconductor junction and to correlate them with the device performance. In addition, the impedance spectra of the studied cell were investigated as a function of temperature. Studies of the frequency and temperature dependences of capacitance do not reveal a significant presence of thermally activated centers of free carrier capture, concomitant with a very small value of the activation energy extracted from an Arrhenius-type analysis. This leads to a conclusion that these centers are likely not impactful on the device operation and efficiency.

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Section: Methodsmentioning

confidence: 99%

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

Aimaganbetov,

Yerezhep,

Kishkenebayev

et al. 2024

Micromachines

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“…The optical transmission spectra in the wavelength range of 300–1100 nm were taken using a QEX10 PV Measurement setup. Temperature-dependent electrical characterization of the graphene-on-quartz samples was performed using admittance spectroscopy in an evacuated low-temperature chamber between 170 and 350 K [ 40 ]. The measurements were carried out in the frequency range of 10 Hz–1 MHz with the amplitude of sinusoidal perturbation of 50 mV.…”

Section: Methodsmentioning

confidence: 99%

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

et al. 2022

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Despite the impressive performance and incredible promise for a variety of applications, the wide-scale commercialization of graphene is still behind its full potential. One of the main challenges is related to preserving graphene’s unique properties upon transfer onto practically desirable substrates. In this work, few-layer graphene sheets deposited via liquid-phase transfer from copper onto a quartz substrate have been studied using a suite of experimental techniques, including scanning electron microscopy (SEM), Raman spectroscopy, admittance spectroscopy, and four-point probe electrical measurements. SEM measurements suggest that the transfer of graphene from copper foil to quartz using the aqueous solution of ammonium persulfate was accompanied by unintentional etching of the entire surface of the quartz substrate and, as a result, the formation of microscopic facet structures covering the etched surface of the substrate. As revealed by Raman spectroscopy and the electrical measurements, the transfer process involving the etching of the copper foil in a 0.1 M solution of (NH4)2S2O8 resulted in its p-type doping. This was accompanied by the appearance of an electronic gap of 0.022 eV, as evidenced by the Arrhenius analysis. The observed increase in the conductance of the samples with temperature can be explained by thermally activated carrier transport, dominating the scattering processes.

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A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices

Cited by 2 publications

References 7 publications

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz

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