A Low-temperature drift bandgap reference circuit with startup enhancement and high currents driving

Abstract

Based on the H*C 0.18 μm BCD process, this paper uses a low-temperature drift bandgap reference circuit with startup enhancement and high currents driving. The circuit employs a startup enhancement circuit to ensure its capability of driving high currents while preventing the circuit from entering metastable states. The simulation results demonstrate that under the TT process corner, the bandgap reference can operate at a supply voltage of above 1.6 V. When driving a high current, the output remains stable at 1.2 V. In the temperature range of -40°C to 140°C, the temperature coefficient reaches 6.5×10-6/°C.