A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

Lee, Yao-Jen; Hsueh, Fu-Kuo; Huang, Shih-Chiang; Kowalski, Jeff M.; Kowalski, Jeff E.; Cheng, Ai-Ling; Koo, Ann; Luo, Guang-Li; Wu, Ching‐Yi

doi:10.1109/led.2008.2009474

Cited by 21 publications

(3 citation statements)

References 14 publications

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“…The channel width and length of a-IGZO TFTs were varied from 200 to 1000 lm. All samples were annealed sequentially in a microwave annealing system with a microwave frequency of 5.8 GHz, 12 as shown in Fig. 1(a).…”

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confidence: 99%

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Teng¹,

Liu²,

Lo³

et al. 2012

Applied Physics Letters

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By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5 cm2/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade. This TFT performance with microwave annealing of 100 s is well competitive with its counterpart with furnace annealing at 450 °C for 1 h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing.

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mentioning

confidence: 99%

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Teng¹,

Liu²,

Lo³

et al. 2012

Applied Physics Letters

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“…The dopants become polarized in the microwave chamber, allowing for dopant activation while the bulk silicon temperature remains at less than 500°C. The result is dopant activation with negligible dopant diffusion [3][4][5][6].…”

Section: Microwave Annealing For Dopant Activationmentioning

confidence: 99%

Thin-Entrance Window Process for Soft X-Ray Sensors

Segal

Kenney

Kowalski³

et al. 2021

Front. Phys.

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New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

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“…Current manufacturing techniques experience several challenges as logic device feature sizes shrink to less than 10 nm and beyond, including high processing requirements and the introduction of new device structures like ultra-shallow junctions, 3DIC, GAA nanowires, high-k/metal gates, and stacked nanowires/nanosheet MOSFETs. [1][2][3] Scaling has become more and more challenging with each successive MOSFET generation because the industry is approaching towards the technological and physical limits of existing processes and materials. High mobility materials, such as SiGe, exhibit lower temperature susceptibility tolerance compared to Si, a characteristic attributed to the challenges in controlling thermal treatment in these new materials, as demonstrated by recent studies.…”

Section: Introductionmentioning

confidence: 99%

Study on dopant activation and EOT impact in HKMG stacks using microwave annealing with different frequencies

Divya,

Chen,

Lee

et al. 2024

Jpn. J. Appl. Phys.

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We have examined the dopant activation levels of various materials(Si, SiGe & Ge) annealed at two different frequency i.e., 2.45GHz and 5.8GHz microwave annealing (MWA) with the aim of identifying a material-targeted annealing method that will minimize the annealing process of high thermal budget. Furthermore, we also fabricated high-k/metal gate MOSCAP structure annealed at 2.45GHz and 5.8GHz MWA as the post-metallization annealing process. The results show that microwave annealing at 2.45GHz is more efficient than high frequency 5.8GHz MWA at 3000W in minimizing the interface trapped charged and the reduction in leakage current density. However, there is slight clear reduction in capacitance as the frequency increased to 5.8GHz resulting in increase of interfacial layer thickness. Due to undesirable effects such as Al diffusion into the dielectric layer, microwave annealing at 2.45GHz demonstrates great a potential candidate as a post-metallization annealing method for high-k/metal gate structures.

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A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

Cited by 21 publications

References 14 publications

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Thin-Entrance Window Process for Soft X-Ray Sensors

Study on dopant activation and EOT impact in HKMG stacks using microwave annealing with different frequencies

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