A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

Lequeux, Steven; Sampaio, João; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hiroshi; Yuasa, Shinji; Grollier, Julie

doi:10.1038/srep31510

Cited by 227 publications

(175 citation statements)

References 40 publications

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“…This dependence of resistance on the charge is the hallmark of memristor devices. Such memristive behavior has been demonstrated in magnetic tunnel junction with more than 15 intermediate resistance states [108]. Recently, it has also been shown that similar smooth magnetization variations can be triggered by spin-orbit torques in a magnetic stripe on top of an antiferromagnetic layer [109].…”

Section: Implementations Of Bioinspired Hardware Using Spintronicsmentioning

confidence: 98%

“…Spintronics offers many approaches for tuning the coupling between magnetic oscillators needed to generate the desired synchronization patterns. When the coupling is electrical, memristors can be inserted in the current lines connecting the oscillators [108]. When the coupling is induced by spin waves, it can be modified by spin-orbit torque locally damping or enhancing the wave amplitude.…”

Section: Implementations Of Bioinspired Hardware Using Spintronicsmentioning

confidence: 99%

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Spintronic Nanodevices for Bioinspired Computing

2016

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Bioinspired hardware holds the promise of low-energy, intelligent, and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for biomedical prosthesis. However, one of the major challenges of fabricating bioinspired hardware is building ultra-high-density networks out of complex processing units interlinked by tunable connections. Nanometer-scale devices exploiting spin electronics (or spintronics) can be a key technology in this context. In particular, magnetic tunnel junctions (MTJs) are well suited for this purpose because of their multiple tunable functionalities. One such functionality, non-volatile memory, can provide massive embedded memory in unconventional circuits, thus escaping the von-Neumann bottleneck arising when memory and processors are located separately. Other features of spintronic devices that could be beneficial for bioinspired computing include tunable fast nonlinear dynamics, controlled stochasticity, and the ability of single devices to change functions in different operating conditions. Large networks of interacting spintronic nanodevices can have their interactions tuned to induce complex dynamics such as synchronization, chaos, soliton diffusion, phase transitions, criticality, and convergence to multiple metastable states. A number of groups have recently proposed bioinspired architectures that include one or several types of spintronic nanodevices. In this paper, we show how spintronics can be used for bioinspired computing. We review the different approaches that have been proposed, the recent advances in this direction, and the challenges toward fully integrated spintronics complementary metal–oxide–semiconductor (CMOS) bioinspired hardware.

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Section: Implementations Of Bioinspired Hardware Using Spintronicsmentioning

confidence: 98%

Section: Implementations Of Bioinspired Hardware Using Spintronicsmentioning

confidence: 99%

Spintronic Nanodevices for Bioinspired Computing

2016

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“…Compared with RRAM, MRAM and PCM also have the advantage of technological maturity, while showing little difference in programming speed (∼ns) and operation voltage . However, despite some breakthroughs, MRAM and PCM show relatively poor analog switching behavior due to the low on/off ratio and the uncontrolled RESET, respectively. Multiterminal cells, such as FeFETs, ECRAM, and 3T1C + 2T2R (3‐transistor 1‐capacitor + 2‐transistor 2‐resistor), allow for more controllable and linear analog switching as a trade‐off for complexity, but their reliability requires more evaluation due to the complex cell structure and unclear working mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

Zhang

Gao

Tang

et al. 2019

Physica Rapid Research Ltrs

105

104

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Brain‐inspired neuromorphic computing has attracted considerable attention due to its potential to circumvent the “von Neumann bottleneck” and mimic human brain activity in electronic systems. The key to developing high‐performance and energy‐efficient neuromorphic computing systems lies in the realization of electronic devices that can closely mimic biological synapses. Resistive random‐access memory (RRAM) has shown some important properties for implementing synaptic functions, including analog weight storage and analog switching. Herein, the recent progress in analog‐type RRAM is reviewed. The mechanisms underlying the analog switching behavior in RRAM and different types of synaptic plasticity based on the analog switching behavior are discussed. Methods to improve the analog switching behavior and synaptic plasticity are then illustrated. Finally, a summary and a perspective on future research are presented.

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“…In the last years, several ideas have been investigated. A first concept based on domain wall-based magnetic tunnel junctions (MTJs) was published in 2016 [4]. The resistance variation is achieved through displacement of a domain wall (DW) in the free layer of a perpendicular MTJ.…”

Section: Introductionmentioning

confidence: 99%

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

et al. 2019

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We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro-and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°.

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A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

Cited by 227 publications

References 40 publications

Spintronic Nanodevices for Bioinspired Computing

Spintronic Nanodevices for Bioinspired Computing

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

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