Abstract:The paper deals with the design of the second generation memory cell MATLAB model. There are described errors of the second generation switched current (SI) memory cell and impact of the SI technique on the transfer function of the memory cell, too. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 μm technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of … Show more
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