A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact

Ragay, F.W.; Leys, Maarten; Nouwens, Peter; Vleuten, W.C. van der; Wolter, J.H.

doi:10.1109/55.192863

Cited by 13 publications

(6 citation statements)

References 5 publications

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“…Taking into account of the material quality only, to date, the highest performance has been realized for the materials grown by metal-organic chemical vapor deposition (MOCVD) [ 1 - 3 ]. It is normally believed that the efficiency of solar cell fabricated by the materials grown by molecular-beam-epitaxy (MBE) is lower than that of MOCVD growth [ 4 , 5 ], though MBE has been proved to be an effective tool for the basic research with its own unique advantage [ 6 ]. One of the main obstacles for the MBE-grown solar cell is considered to be the more defect states and deep centers due to the low growth temperature.…”

Section: Introductionmentioning

confidence: 99%

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

et al. 2011

Nanoscale Res Lett

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We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.

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Section: Introductionmentioning

confidence: 99%

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

et al. 2011

Nanoscale Res Lett

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“…Even both coupled [19][20][21] and uncoupled [22] QD stacks are reported to have significant shift in the emission peaks upon annealing at higher temperatures (>600 • C). This stability in the PL emission peak of the MQD sample due to annealing up to 700 • C makes such heterostructure useful in fabrication of IBSCs where the window layer is grown at higher temperature (>590 • C) [12,13]. In Fig.…”

Section: Resultsmentioning

confidence: 97%

“…In order to ensure proper fabrication of the GaAs based QD IBSC, an AlGaAs window layer is to be grown over the top of GaAs solar cells. The AlGaAs layers are usually grown at temperatures higher than the growth temperature of the InAs/GaAs QDs [12,13].…”

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confidence: 99%

Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: an important observation for their potential application in photovoltaic devices

2012

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We have investigated the effect of post growth rapid thermal annealing on self-assembled InAs/GaAs multilayer QDs (MQD) overgrown with a combination barrier of InAlGaAs and GaAs for their possible use in photovoltaic device application. The samples were characterized by transmission electron microscopy and photoluminescence measurements. We noticed a thermally induced material interdiffusion between the QDs and the wetting layer in the MQD sample up to a certain annealing temperature. The QD heterostructure exhibited a thermal stability in the emission peak wavelength on annealing up to 700 • C temperature. A phenomenological model has been proposed for this stability of the emission peak. The model considers the effect of the strain field, propagating from the underlying QD layer to the upper layers of the multilayer QD and the effect of indium atom gradient in the combination barrier layer due to the presence of a quaternary InAlGaAs layer.

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“…Single-crystal Al has been grown in-situ on (100) GaAs by Molecular Beam Epitaxy (MBE) at room temperature, and was found to form a Schottky rectifying contact 17 . Furthermore, researchers have shown that MBE-grown Al can form a leaky Schottky-based ohmic contact as well as a self-aligned mask for selective etching in GaAs solar cell fabrication 18 . Al was also used as a n-type dopant for ZnSe 19 , and could be embedded in many MBE systems for ZnSe growth.…”

Section: Introductionmentioning

confidence: 99%

In-situ grown single crystal aluminum as a non-alloyed ohmic contact to n-ZnSe by molecular beam epitaxy (MBE)

Fan,

Bunk,

Wang

et al. 2020

Preprint

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Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy (MBE). Electron Backscatter Diffraction (EBSD) confirmed the single crystalline structure of the Al films. The growth direction is [110], and the Al lattice is rotated 45 • relative to substrate to match the ZnSe (100) lattice constant. The as-grown Al-ZnSe contact exhibited nearly ideal electrical characteristics over a large doping range of n-ZnSe without any additional treatment. The contact resistances are in a range of 10 −3 Ω-cm 2 for even lightly doped ZnSe (∼10 17 cm −3 ). Leaky Schottky behavior in lightly doped ZnSe samples suggested Al-ZnSe formed a low barrier height, Schottky limit contact. In-situ grown Al could act as a simple metal contact to n-ZnSe regardless of carrier concentration with lower resistance compared to other reported contacts in literatures. The reported novel metallization method could greatly simplify the ZnSe-based device fabrication complexity as well as lower the cost.

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A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact

Cited by 13 publications

References 5 publications

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: an important observation for their potential application in photovoltaic devices

In-situ grown single crystal aluminum as a non-alloyed ohmic contact to n-ZnSe by molecular beam epitaxy (MBE)

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