A measurement based gate current model for GaAs MESFET's and HEMT's including self-heating and impact ionization

Smely, D.; Mayer, Martin; Magerl, Gottfried

doi:10.1109/edmo.2001.974311

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A measurement based gate current model for GaAs MESFET's and HEMT's including self-heating and impact ionization

Cited by 3 publications

References 9 publications

Thermal aspects of GaAs power FET attachment using isotropically conductive adhesive

Thermal aspects of GaAs power FET attachment using isotropically conductive adhesive

Impact-Ionization Effects on the High-Frequency Behavior of HFETs

DC/RF Hysteresis in Microwave pHEMT Amplifier Induced by Gate Current—Diagnosis and Elimination

Contact Info

Product

Resources

About