A mechanism and a reduction technique for large reverse leakage current in p-n junctions

Ohyu, K.; Ohkura, M.; Hiraiwa, Atsushi; Watanabe, Kunihiko

doi:10.1109/16.398655

Cited by 27 publications

(16 citation statements)

References 12 publications

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“…Another leakage current mechanism, called the thermionic field emission (TFE) current, J T F E , has been reported when the local electric field is higher than 0.1 MV/cm [11,12]. The thermal emission rate from a trap level is enhanced by the tunneling effect due to the strong electric field at certain positions of the depletion region.…”

Section: Mechanisms Of the Junction Leakage Currentmentioning

confidence: 99%

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Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal -ray Dosimeter

Park¹,

Park²,

Yoon³

et al. 2007

J. Korean Phys. Soc.

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The effects of resistivity and crystal orientation on the leakage-current and the radiation-response characteristics of silicon PIN detectors have been studied. A high-resistive substrate (>8 kΩ·cm) shows a larger leakage current than a low-resistive one (<4 kΩ·cm) at low reverse bias because of its wider depletion width, but the opposite result is seen at high reverse bias. We think that the thermionic field emission (TFE) current increases at high reverse bias for a low-resistive substrate. The detector with a (111)-oriented substrate exhibits leakage current chacteristics comparable to those of the (100)-oriented one when the resistivity of the substrate is 3.8 kΩ·cm. An X-ray beam irradiation test showed that the output current of the detector with the (111)-oriented substrate was 20 % higher than that of the (100)-orientated one and that the result was independent of the resistivity of the substrate. Based on the results, we fabricated a silicon PIN detector for a personal γ ray dosimeter operated at 3 V with a substrate having a (111) orientation and a resistivity of 3.8 kΩ·cm, and we assembled it with read-out integrated circuit. Our detector was sensitive to Cs 137 natural γ rays and showed a good linearity in the exposure rate.

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Section: Mechanisms Of the Junction Leakage Currentmentioning

confidence: 99%

“…The thermal emission rate from a trap level is enhanced by the tunneling effect due to the strong electric field at certain positions of the depletion region. J T F E can be expressed by [11] …”

Section: Mechanisms Of the Junction Leakage Currentmentioning

confidence: 99%

Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal -ray Dosimeter

Park¹,

Park²,

Yoon³

et al. 2007

J. Korean Phys. Soc.

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“…To investigate the origin of the increased leakage currents the Zener probability (P ) in the presence of local enhancements of the electric field is considered, as given by [2]:…”

Section: Zener Tunneling Leakage Currentmentioning

confidence: 99%

“…The leakage current rapidly increases with reverse drain bias and the slope is greater for the higher dose (6×10 13 cm −2 ) relative to the lower one (4×10 13 cm −2 ). The increased defect density for the highdose ion-implantation is a major contributing factor, which can enlarge the local electric field in the reverse bias p-n depletion layer-the so called the local Zener effect [2].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Zener-tunneling drain leakage current in high-dose halo implants

Choi

Yang

Pollack

et al. 2003

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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Degraded junction leakage current in scaled MOSFETs due to enhanced band-to-band tunneling (i.e. local Zener effect) is characterized based on a modified band-to-band tunneling model. To suppress the severe drain leakage current in the presence of high-dose halo implants, the impact of implant conditions on drain leakage current is estimated based on implant induced damage (point defect) profiles.

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“…But previous studies [5,6] have shown that electric field is enhanced when precipitates are located in high electric field. Metal precipitates (such as Cu, Fe, Al etc.…”

Section: Field Enhancementmentioning

confidence: 99%

Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time

Saino

Horiba

Uchiyama

et al.

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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In this paper we propose a new model for leakage mechanism in tail-mode bits of DRAM data retention characteristics. For main-mode bits, leakage current can be attributed to junction thermal-generation leakage current. For tail-mode bits, it is found for the first time that Gate-Induced Drain Leakage (GIDL) current has a dominant impact. The root cause is electric field enhancement caused by metal precipitates located at the gate-drain overlap region.

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A mechanism and a reduction technique for large reverse leakage current in p-n junctions

Cited by 27 publications

References 12 publications

Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal -ray Dosimeter

Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal -ray Dosimeter

Characterization of Zener-tunneling drain leakage current in high-dose halo implants

Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time

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