A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS<sub>2</sub>

Jian, Jiaying; Chang, Honglong; Dong, Pengfan; Bai, Zewen; Zuo, Kangnian

doi:10.1039/d0ra10302k

Cited by 10 publications

(4 citation statements)

References 41 publications

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“…(e) Responsivity and detectivity maxima of phototransistor based on mono-, bi-, and trilayer MoS 2 . (f) Comparison of device performance of MoS 2 -based photodetectors between this work and refs − .…”

Section: Resultsmentioning

confidence: 92%

“…The potential reason for trilayer MoS 2 has a higher photoresponse might due to the larger light adsorption, lower contact resistance, and the higher screening effect of the surface trap charge. As shown in Figure f, the recent reported MoS 2 -based photodetector has been summarized. − In the real application, the photodetector would have both the higher photoresponsivity and detectivity. As shown in Figure f, one can clearly see that although the present trilayer AAA-stacking MoS 2 does not have the best photoresponsivity, its facile fabrication is much more consisted with the current microelectronic process.…”

Section: Resultsmentioning

confidence: 98%

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Layer-by-Layer Growth of AA-Stacking MoS₂ for Tunable Broadband Phototransistors

Luo

Peng

Wang

et al. 2021

ACS Appl. Mater. Interfaces

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The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS 2 domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS 2 domains would transit from an AA-stacking bilayer to an AAAAAstacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS 2 phototransistors, we found a significant dependence on the stacking configuration of MoS 2 of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS 2 phototransistor delivers a photoresponse of 978.14 A W −1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 98%

Layer-by-Layer Growth of AA-Stacking MoS₂ for Tunable Broadband Phototransistors

Luo

Peng

Wang

et al. 2021

ACS Appl. Mater. Interfaces

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“…The figures-of-merit for photodetectors from other similar systems are listed in Table for comparison. ,− Our photodetector shows a relatively high photoresponsivity even in the self-driven mode. At the same time, it possesses an extremely low dark current, which is generally hard to be balanced in photodetectors.…”

Section: Resultsmentioning

confidence: 99%

High-Performance van der Waals Photodetectors Based on 2D Ruddlesden–Popper Perovskite/MoS₂ Heterojunctions

Hao

et al. 2022

J. Phys. Chem. C

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Perovskites have prevailed in the field of photovoltaics over the past several years thanks to their outstanding optoelectronic properties. Compared to threedimensional (3D) perovskites, the emerging two-dimensional (2D) Ruddlesden− Popper (RP) phase perovskites have demonstrated superior stability due to their hydrophobic organic capping ligands, which can protect the inside inorganic octahedrons against moisture. Meanwhile, RP perovskites broaden the family of 2D materials, enriching the building blocks for van der Waals heterostructures. Here, we first demonstrated a vertical heterojunction incorporating RP perovskite (C 6 H 5 C 2 H 4 NH 3 ) 2 PbBr 4 and MoS 2 . The heterojunction photodetector exhibits an extremely low dark current down to 0.1 pA, which can be attributed to the combining effect of the low carrier density in RP perovskites and the band structure of the heterojunction. The spatially resolved scanning photocurrent microscopy (SPCM) was carried out to confirm the charge transport mechanism and band alignment of the heterojunction. Moreover, the photodetector benefits from the heterojunction structure, leading to a high photoresponsivity (7.98 mA W −1 ). In addition, the device can be operated under a self-driven mode with a responsivity of 0.168 mA W −1 . Our work proves the compatibility of RP perovskites in van der Waals devices, promising a scalable pathway to further applications.

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“…Researchers have explored solution-based fabrication methods such as hydrothermal synthesis, spin coating, and 3D printing in recent years. [19][20][21][22] These methods are simple in process and low in cost, and can be used to fabricate largearea and flexible PDs. Here, we mainly introduce the following four fabrication methods.…”

Section: Fabrication Methods Of Flexible Pdsmentioning

confidence: 99%

Fabrication, material regulation, and healthcare applications of flexible photodetectors

et al. 2022

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A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS₂

Abstract: The CVD-grown 2D MoS2 is the oxygen-doped MoS2. Annealing treatment can increase the O-doping concentration in the CVD-grown 2D MoS2 while vulcanization can make the CVD-grown 2D MoS2 transition from the an oxygen-doped state to the a pure state.

Cited by 10 publications

References 41 publications

Layer-by-Layer Growth of AA-Stacking MoS₂ for Tunable Broadband Phototransistors

Layer-by-Layer Growth of AA-Stacking MoS₂ for Tunable Broadband Phototransistors

High-Performance van der Waals Photodetectors Based on 2D Ruddlesden–Popper Perovskite/MoS₂ Heterojunctions

Fabrication, material regulation, and healthcare applications of flexible photodetectors

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A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS2

Abstract: The CVD-grown 2D MoS2 is the oxygen-doped MoS2. Annealing treatment can increase the O-doping concentration in the CVD-grown 2D MoS2 while vulcanization can make the CVD-grown 2D MoS2 transition from the an oxygen-doped state to the a pure state.

Cited by 10 publications

References 41 publications

Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors

Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors

High-Performance van der Waals Photodetectors Based on 2D Ruddlesden–Popper Perovskite/MoS2 Heterojunctions

Fabrication, material regulation, and healthcare applications of flexible photodetectors

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Resources

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A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS₂

Layer-by-Layer Growth of AA-Stacking MoS₂ for Tunable Broadband Phototransistors

Layer-by-Layer Growth of AA-Stacking MoS₂ for Tunable Broadband Phototransistors

High-Performance van der Waals Photodetectors Based on 2D Ruddlesden–Popper Perovskite/MoS₂ Heterojunctions