A MEMS-based, high-sensitivity pressure sensor for ultraclean semiconductor applications

Henning, Alex; Mourlas, Nicholas J.; Metz, Stefan; Zias, A.

doi:10.1109/asmc.2002.1001596

Cited by 6 publications

(3 citation statements)

References 2 publications

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“…The analyzing of pressure sensors output signal does not have significant difference for sensitivity each sample at repeated pressures. Therefore, this type of pressure sensor chips has a low error for repeatability, because it is also important enough for ultralow pressure sensors [43]. This fact is also observed from a low error of long-term instability during 9 h of measurement every hour.…”

Section: Resultsmentioning

confidence: 93%

Development of high-sensitivity piezoresistive pressure sensors for −0.5…+0.5 kPa

Basov

Prigodskiy

2020

J. Micromech. Microeng.

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A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).

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Section: Resultsmentioning

confidence: 93%

Development of high-sensitivity piezoresistive pressure sensors for −0.5…+0.5 kPa

Basov

Prigodskiy

2020

J. Micromech. Microeng.

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“…However, extensions of the dynamic range are still desired. To achieve a goal of 0.25% of reading accuracy over a 100:1 dynamic range, with minimal drift over cycling and time, will require one or more of the following: higher-resolution pressure sensor 28 ; improvement in the temperature coefficient of expansion match between sensor die and package; and improvement in the thermomechanical relaxation of the sensor die attach material.…”

Section: Discussionmentioning

confidence: 99%

Long-Term Drift Measurements in MEMS-Based Mass Flow Controllers

Lawrence

Henning

2003

SPIE Proceedings

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Micro-electromechanical systems (MEMS) components find increasing use in devices which measure and control gas flow, for medical and industrial use. Little or no information on the reliability of these devices has been published. This work reports the results of long-term performance studies of pressure-based mass flow controllers (MFCs) comprised of MEMS microvalves, pressure sensors, and critical flow orifices. Specifically, the details of long-term drift in the silicon pressure sensors (which comprise the flow sensor) are presented. Generally, pressure-based MFCs using MEMS components retain a flow accuracy of better than 1% of full scale over a 20:1 dynamic range, with response time under 0.5 sec, after more than three million operation cycles. The primary cause of inaccuracy within this dynamic range, and of inaccuracy larger than 1% of full scale beyond this range, is attributable to uncompensated zero-offset drift in the silicon pressure sensors, whose behavior is intrinsic to the flow sensor. Data is presented which details this characteristic, across many MFCs. Mechanical, thermal, fluidic, pneumatic and electronic mechanisms possibly responsible for the drift are also presented. Means to overcome this long-term drift phenomenon in silicon pressure sensors will complete the discussion.

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“…Of particular interest are microvalves utilizing membranes to modulate flow [1,2]. Also of interest are membranes, or thin single-crystal silicon beams, used in micropumps [3], pressure sensors [4,5], accelerometers [6], and acoustic (sound) receivers or generators [7,8].…”

Section: Introductionmentioning

confidence: 99%

Factors affecting silicon membrane burst strength

et al. 2004

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Factors affecting the fracture strength of single-crystal silicon membranes are assessed. These factors include: membrane shape at the membrane's intersection with structural frames or sidewalls, membrane thickness, membrane surface roughness, membrane mis-orientation to the principal crystallographic axes, wafer starting material quality, membrane stress (or pre-tension), and microstructure and shape at bond interfaces, such as the anodic bond interface between membrane and Pyrex wafers. Measurements of fracture strength versus these factors are made. Direct measurements of stress are also made using micro-Raman techniques. Simulations of membrane structures are studied, in order to evaluate the measurements. The results indicate that the predominant factor affecting fracture strength is surface roughness.

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A MEMS-based, high-sensitivity pressure sensor for ultraclean semiconductor applications

Cited by 6 publications

References 2 publications

Development of high-sensitivity piezoresistive pressure sensors for −0.5…+0.5 kPa

Development of high-sensitivity piezoresistive pressure sensors for −0.5…+0.5 kPa

Long-Term Drift Measurements in MEMS-Based Mass Flow Controllers

Factors affecting silicon membrane burst strength

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