2020
DOI: 10.1016/j.matlet.2020.127344
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A metal lift-off process through hyperbolic undercut of laser heat-mode lithography

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Cited by 10 publications
(7 citation statements)
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“…Hence, the residual thickness of AgGeSbTe resist is 180 nm, and the AgGeSbTe resist is etched by 40 nm with the etching rate of as low as 8 nm/min. Therefore, the etching selectivity of Si to AgGeSbTe resist reaches 19. Results indicate that the AgGeSbTe resist possesses good etching resistance.…”
Section: Resultsmentioning
confidence: 95%
See 1 more Smart Citation
“…Hence, the residual thickness of AgGeSbTe resist is 180 nm, and the AgGeSbTe resist is etched by 40 nm with the etching rate of as low as 8 nm/min. Therefore, the etching selectivity of Si to AgGeSbTe resist reaches 19. Results indicate that the AgGeSbTe resist possesses good etching resistance.…”
Section: Resultsmentioning
confidence: 95%
“…However, wet development is adopted in heat-mode lithography, which readily results in the undercut of resist and, therefore, the pattern collapse [19] . At the same time, wet development will also readily cause resist swelling, influencing the pattern fidelity.…”
Section: Introductionmentioning
confidence: 99%
“…Under laser irradiation (exposure), the as-deposited AIST can be changed to the crystalline state. , After development with the alkaline solution, the uncrystallized part of the resist film can be removed Figure a,b shows the two-dimensional (2D) and cross-sectional AFM images of the developed AIST film, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…20,21 After development with the alkaline solution, the uncrystallized part of the resist film can be removed. 22 Figure 2a,b shows the two-dimensional (2D) and cross-sectional AFM images of the developed AIST film, respectively. The AIST grating structure with a thickness of about 70 nm was formed on the Cr surface and the halfpitch (HP) of the grating is about 200 nm, which is quite smaller than the writing wavelength (405 nm).…”
Section: Resultsmentioning
confidence: 99%
“…The development of the AIST resist is generally carried out in a solution of 17% ammonium sulfide. [22,23] However, hydrolysis of the ammonium sulfide releases toxic and corrosive hydrogen sulfide gas, which causes serious air pollution and potential danger to operators. Furthermore, this photoresist development process not only has a low etching rate, but also generates inhomogeneous structures.…”
Section: Introductionmentioning
confidence: 99%