A Metal-Oxide-Semiconductor (MOS) Hall element

Gallagher, Ryan; Corak, W. S.

doi:10.1016/0038-1101(66)90172-9

Cited by 76 publications

(14 citation statements)

References 6 publications

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“…The magnetic sensor used here is a Hall element with an n‐channel MOS field‐effect transistor (MOSFET) inversion layer . The sizes of Hall elements were decided as 1 × 1, 2 × 2, 3 × 3, and 6 × 6 μm 2 .…”

Section: Structure Of the Magnetic Sensormentioning

confidence: 99%

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Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Kimura

Uno

Masuzawa

2015

IEEJ Transactions Elec Engng

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Two‐dimensional integrated magnetic sensors have been investigated in order to reduce their size for use in a magnetic self‐levitation motor. The two‐dimensional integrated magnetic sensor investigated in this paper is composed of a 16 × 16 array of Hall sensors and fabricated by a 0.18‐μm complementary metal–oxide–semiconductor (CMOS) standard process. The sizes of the Hall elements are 1 × 1, 2 × 2, 3 × 3, and 6 × 6 μm2. Hall element of dimension 1 × 1 μm2was the minimum size in the fabrication process rule. The dimension of one pixel in which the Hall element was embedded was 20 × 20 μm2. The average sensitivity of the arrayed Hall sensors at four sizes was about 0.140 mV/mT with a DC magnetic field. The product sensitivity at four sizes of Hall sensors was about 0.089 mV/(mA·mT), which is better than that of our previous work. Degradation of the product sensitivity was not seen in reduced‐size Hall elements. These results reveal that a Hall element of size 1 × 1 μm2 has enough sensitivity for sensing the impeller position of a magnetically suspended motor. © 2015 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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Section: Structure Of the Magnetic Sensormentioning

confidence: 99%

“…In these systems, Si Hall elements are used instead of InSb and GaAs because of the compatibility between the Hall elements and the circuitry. By using the submicrometer complementary metal–oxide–semiconductor (CMOS) fabrication process, the size of Si Hall elements has been getting smaller .…”

Section: Introductionmentioning

confidence: 99%

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Kimura

Uno

Masuzawa

2015

IEEJ Transactions Elec Engng

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“…Orientation effects always need to be considered as they are known to exist for other semiconductor elements such as Metal‐Oxide‐Semiconductor Field Effect Transistors (MOSFET). In a MOS device, the induced Hall voltage in the inversion layers is dependent on the orientation of the magnetic field with respect to the drain current .…”

Section: Discussionmentioning

confidence: 99%

Comparison of two fiber-optical temperature measurement systems in magnetic fields up to 9.4 Tesla

et al. 2014

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“…the aelelitional two contacts for measuring the Hali voltage. Such MOSFET elevices, of ten calleel "MOS Hali generators" [7], are being useel for the investigation of the charge transport inclueling hot electron effects in the inversion layers of silicon MOS devices [8], at room anei at cryogenic temperatures.…”

Section: Hall Effect Measurementsmentioning

confidence: 99%

In-Situ Characterization of Carrier Mobility in Field Effect Transistors

Andreou

1989

Review of Progress in Quantitative Nondestructive Evaluation

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A Metal-Oxide-Semiconductor (MOS) Hall element

Cited by 76 publications

References 6 publications

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Comparison of two fiber-optical temperature measurement systems in magnetic fields up to 9.4 Tesla

In-Situ Characterization of Carrier Mobility in Field Effect Transistors

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