2019
DOI: 10.1016/j.vacuum.2019.02.019
|View full text |Cite
|
Sign up to set email alerts
|

A metallurgical route to upgrade silicon kerf derived from diamond-wire slicing process

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
10
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 36 publications
(10 citation statements)
references
References 30 publications
0
10
0
Order By: Relevance
“…In recent years, many studies have been conducted to recover silicon from DWSSP. These methods mainly included the hydrobromination chemical approach with HBr, carbon elimination by furnace aerosol reactor method, hydrochloric acid leaching for aluminum removal, sulfuric acid leaching for iron removal, carbothermal reduction for silicon recovery in the electric arc furnace, slag treatment for boron removal and silicon extraction, , ultrafine silicon powder smelting with laser-assisted granulation, induction furnace melting with slag treatment for silicon recovery, and vacuum carbothermal reduction for silicon dioxide decomposition . After many studies, the oxidation phenomenon of ultrafine silicon particles in DWSSP was widely recognized for silicon recovery .…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In recent years, many studies have been conducted to recover silicon from DWSSP. These methods mainly included the hydrobromination chemical approach with HBr, carbon elimination by furnace aerosol reactor method, hydrochloric acid leaching for aluminum removal, sulfuric acid leaching for iron removal, carbothermal reduction for silicon recovery in the electric arc furnace, slag treatment for boron removal and silicon extraction, , ultrafine silicon powder smelting with laser-assisted granulation, induction furnace melting with slag treatment for silicon recovery, and vacuum carbothermal reduction for silicon dioxide decomposition . After many studies, the oxidation phenomenon of ultrafine silicon particles in DWSSP was widely recognized for silicon recovery .…”
Section: Introductionmentioning
confidence: 99%
“…This is attributable to the presence of a SiO 2 surface layer preventing DWSSP melting . Surface oxidation is an important barrier for silicon recovery from DWSSP because it is difficult for the traditional furnace to melt the SiO 2 layer, thus limiting the DWSSP to be further processed and reused . In addition, the smelting process of DWSSP can easily encounter problems in the presence of oxygen, such as the low yield of silicon or even the melting failure of the silicon powder .…”
Section: Introductionmentioning
confidence: 99%
“…DWSSP has two characteristics: one is that the silicon particles are ultrafine, and the other is that the silicon particles are wrapped by an amorphous silica (SiO x ) shell . Unfortunately, it is difficult for silicon to extract from DWSSP due to the oxide layer . Furthermore, the above two characteristics lead to severe oxidation loss of DWSSP, of course, and a lower silicon yield during the slag refining process as well.…”
Section: Introductionmentioning
confidence: 99%
“…33 Unfortunately, it is difficult for silicon to extract from DWSSP due to the oxide layer. 34 Furthermore, the above two characteristics lead to severe oxidation loss of DWSSP, of course, and a lower silicon yield during the slag refining process as well.…”
Section: ■ Introductionmentioning
confidence: 99%
“…20 The authors' previous studies have investigated the kinetic mechanism of Al removal via HCl leaching, 21 the dissolution and mineralization behavior of metal elements, 22 and the Si core−SiO 2 shell structure. 23 Moreover, the kinetic mechanism of iron removal with H 2 SO 4 leaching, 24 multicomponent acid purification, 25 the combined process of slag treatment and acid leaching, 26 and acid leaching followed by induction furnace melting 27 have also been investigated by other research groups.…”
Section: ■ Introductionmentioning
confidence: 99%