A metastable phase of tin in 3D integrated circuit solder microbumps

Liu, Y.; Tamura, Nobumichi; Kim, Dong Wook; Gu, Sam; Tu, King‐Ning

doi:10.1016/j.scriptamat.2015.02.009

Cited by 20 publications

(9 citation statements)

References 9 publications

(9 reference statements)

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“…However, underfill entrapment caused by both capillary force and pre-applied underfill may influence microbumps reliability. Liu et al [ 63 ] emphasized that there must not be any filler trapped in the extrusion of the compressed microbumps, otherwise they will exhibit poor electrical conduction. Ohyama et al [ 62 ] overcame these challenges by employing a hybrid bonding process, whereby the excess pre-applied underfill-coated microbumps are removed by polishing.…”

Section: Three-dimensional Integrated Circuits: the Technologymentioning

confidence: 99%

Intermetallic compounds in 3D integrated circuits technology: a brief review

Annuar

Mahmoodian

Hamdi

et al. 2017

Science and Technology of Advanced Materials

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The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

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Section: Three-dimensional Integrated Circuits: the Technologymentioning

confidence: 99%

Intermetallic compounds in 3D integrated circuits technology: a brief review

Annuar

Mahmoodian

Hamdi

et al. 2017

Science and Technology of Advanced Materials

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“…The signal of Sn was at 3.44 keV, which could serve as proof of the presence of Sn on the Sn/rGO/SPCE. 46 As shown in Table S1, an average elemental composition of Sn/rGO/ SPCE suggested the existence of C, O, and Sn with weight percentages of 79, 18, and 3 wt %, respectively.…”

Section: Resultsmentioning

confidence: 92%

“…The EDX spectrum in Figure g reveals that the Sn/rGO/SPCE had well-defined elemental peaks for carbon at 0.27 keV and oxygen at 0.52 keV, confirming the elemental component of the Sn/rGO catalyst ink. The signal of Sn was at 3.44 keV, which could serve as proof of the presence of Sn on the Sn/rGO/SPCE . As shown in Table S1, an average elemental composition of Sn/rGO/SPCE suggested the existence of C, O, and Sn with weight percentages of 79, 18, and 3 wt %, respectively.…”

Section: Results and Discussionmentioning

confidence: 99%

Sensitive Portable Electrochemical Sensors for Antibiotic Chloramphenicol by Tin/Reduced Graphene Oxide-Modified Screen-Printed Carbon Electrodes

Bunnasit,

Thamsirianunt,

Rakthabut

et al. 2024

ACS Appl. Nano Mater.

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A sensitive electrochemical sensor for the determination of an antibiotic chloramphenicol (CAP) in real samples was developed since they have been widely used in medicine and veterinary practice. Therefore, in this present work, tin (Sn) and reduced graphene oxide (rGO) were used to modify and to enhance the sensitivity and selectivity of a disposable screenprinted carbon electrode (SPCE), along with a fast response and a simple preparation. Transmission electron microscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, elemental mapping, and X-ray photoelectron spectroscopy were used to evaluate the synthesized Sn/rGO catalyst. The electrochemical performance of the Sn/rGO/SPCE was assessed for the determination of CAP under optimum conditions using differential pulse voltammetry, cyclic voltammetry, and electrochemical impedance spectroscopy. The Sn/rGO/SPCE showed two linear detection ranges at 0.5−30 μM with the linear regression I pc (μA) = 0.3895C (μM) + 0.1599 with R 2 = 0.9957 and at 30 to 100 μM with the linear regression I pc (μA) = 0.1161C (μM) + 8.1342 with R 2 = 0.9941. The limit of detection was 0.2 μM (S/N = 3) and limit of quantification was 0.7 μM (S/N = 10). The sensitivities for the lower and higher concentration ranges were 0.934 and 0.278 μA μM −1 cm −2 , respectively. Additionally, the Sn/rGO/SPCE showed great selectivity and anti-interference capabilities. The sensing and disposable Sn/rGO/SPCE sensor showed a great potential for CAP analysis in milk, honey, and eye drop samples with desirable percentage recovery.

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“…Based on annual report of SIA in 2005 that there are more transistors are produced with cost lower than a grain rice [20]. A history analyst, Gordon Moore, estimates that the amount of transistor in a chip will rise exponentially [21][22][23][24]. In Figure 4 it is shown the development of transistor inside a chip.…”

Section: Discussionmentioning

confidence: 99%

“…Based on Moore's law, miniaturization is approaching the limit and is now already to be used in nanoscale dimension. One way to overcome this limit is to combine the chip technology with a packaging technology that can accumulate chips into 3D integrated chips [22] [32][33]. When the dimension of IC became smaller electrical resistance, power density and thermal of the chips increase [34].…”

Section: The Present and The Futurementioning

confidence: 99%

Trend of Energy Saving in Electronic Devices for Research and Development

Rahmayanti

Utomo

Rijanto

2016

MATEC Web of Conferences

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Abstract. In electronic industry, energy saving is one of the performance indicators of competitiveness beside price, speed, bandwidth and reliability. This affects research and development (R&D) activity in mechatronic systems which uses electronic components and electronic systems. A review of trend of electronic devices technology development has been conducted with focus on energy saving. This review includes electronic devices, semiconductor, and nanotechnology. It can be concluded that the trend in electronic devices is mainly dictated by semiconductor technology development. The trend can be concluded as smaller size, lower voltage leading to energy saving, less heat, higher speed, more reliable, and cheaper. In accordance to such technology development, R&D activities in mechatronics especially in Indonesia is being pushed to make proper alignment.Some of such alignment actions are surface mount technology (SMT) for installing surface mount devices components (SMD), design layout and SMD troubleshooting tools as well as human resources training and development.

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A metastable phase of tin in 3D integrated circuit solder microbumps

Cited by 20 publications

References 9 publications

Intermetallic compounds in 3D integrated circuits technology: a brief review

Intermetallic compounds in 3D integrated circuits technology: a brief review

Sensitive Portable Electrochemical Sensors for Antibiotic Chloramphenicol by Tin/Reduced Graphene Oxide-Modified Screen-Printed Carbon Electrodes

Trend of Energy Saving in Electronic Devices for Research and Development

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