A method for determining energy gap narrowing in highly doped semiconductors

Neugroschel, A.; Pao, S. C.; Lindholm, F.A.

doi:10.1109/t-ed.1982.20796

Cited by 60 publications

(18 citation statements)

References 29 publications

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“…3 as full circles. A new result, obtained here, for Si: B p-type layers from transport measurements is shown was the same as in [15]. The data was obtained in the range 320 to 380 K. Assuming AE, to be fairly temperature-independent in this range, it seemed reasonable to associate it with 340 K. The curve is based on our model, equation For lower concentrations our model underestimates AE,.…”

Section: Comparison With Experimentssupporting

confidence: 75%

“…3. In contrast our analysis [15] assumes only a temperature independence of ,u in the measurement range, but it does not assume the magnitude of p, which is not well known [8,23,24]. Thus our interpretation of the transport data is more physical.…”

Section: Comparison With Experimentsmentioning

confidence: 97%

“…5. For intrinsic silicon a t 300 K the effective masses of electrons and holes are m*/m = 1.1 [9,15,291. Although the effective masses for heavily-doped silicon a t this temperature are again not well-known, the model is seen to give satisfactory agreement for m*/m = 1.1.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

“…0 [17], + [18], a [19],0 [20], x [21], v [22], [15], A this work a s a full triangle, This new result was obtained using a p+-n-p transistor with uniformly doped ( N A = 5 x 1019 ~m -~) 0.2 pm thick emitter. The measurement methodwas the same as in[15]. The data was obtained in the range 320 to 380 K. Assuming AE, to be fairly temperature-independent in this range, it seemed reasonable to associate it with 340 K. The curve is based on our model, equation (21), and gives good agreement for m,/m x mp/m = 1.1 and a majority carrier concentration n or p 2 2 5 x lOI9 0111-3.…”

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confidence: 99%

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A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon

Landsberg

Neugroschel

Lindholm

et al. 1985

Physica Status Solidi (b)

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A model for band-gap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones obtained by the authors, gives agreement between the model and experiments on n-and p-type silicon which is good as far as transport measurements in the N 300 K range by various authors are concerned. I n fact, the discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent optical determinations of the band-gap shrinkage a t 5 K. The model is based on Debye screening and, apart from effective masses, temperature, dielectric constant, and carrier concentrations, which must enter any theory of gap shrinkage in some form, it is parameter-free. The model gives in Gaussian units AE, = 126.6(m*/m)1/2 x x (~/ l O ) -3 / 2 (n/1018)116 meV in the degenerate limit.Es wird ein Modell fur die Bandluckenschrumpfung in Halbleitern entwickelt und auf Silizium angewendet. Ein uberblick iiber fruhere Experimente und neuere von den Autoren gibt ubereinstimmung zwischen Modell und Experimenten fur n-und p-leitendes Silizium, die gut ist, sofern sie Transportmessungen im = 300 K-Bereic h von verschiedenen Autoren betrifft. Tatsiichlich sind die Diskrepanzen zwischen Theorie und Experiment nicht grol3er als die Unterschiede zwischen den experimentellen Ergebnissen verschiedener Autoren. Es liefert auch eine gute Erkliirung der neueren optischen Bestimmungen der Bandliickenschrumpfung bei 5 K. Das Modell berulit auf der Debye-Abschirmung und abgeselien von effektiven Massen, Temperatur, Dielektrizitittskonstante und Ladungstriigerkonzentration, die in irgendeiner Form in jede Theorie der Bandluckenschrumpfung eingehen mussen, ist es parameterfrei. Das Modell liefert AE, = = 126,6(m*/m)1/2 (e/lO)-3/2 (n/l0l8)1/e meV in GauBschen Einheiten im Entartungsgrenzfall. ___--_Gainesville, Florida 32 61 1, USA. 2, Permanent address :

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Section: Comparison With Experimentssupporting

confidence: 75%

Section: Comparison With Experimentsmentioning

confidence: 97%

Section: Comparison With Experimentsmentioning

confidence: 99%

mentioning

confidence: 99%

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