A method for optimizing the electrical conductivity of Al:ZnO TCO films

Efafi, Babak; Mousavi, Seyedeh Soraya; Ara, M.H. Majles; Ghafari, Bijan; Mazandarani, Hamid Reza

doi:10.1016/j.matlet.2017.02.079

Cited by 22 publications

(3 citation statements)

References 16 publications

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“…Many other reports can be found in which the effect of the Al doping level on the functional properties of AZO are described [ 53 , 57 , 58 , 59 ].…”

Section: Finding An Optimal Doping Level Of Al: Effect Of Al Doping O...mentioning

confidence: 99%

Recent Progress in Solution Processed Aluminum and co-Doped ZnO for Transparent Conductive Oxide Applications

Singh

Scotognella

2023

Micromachines

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With the continuous growth in the optoelectronic industry, the demand for novel and highly efficient materials is also growing. Specifically, the demand for the key component of several optoelectronic devices, i.e., transparent conducting oxides (TCOs), is receiving significant attention. The major reason behind this is the dependence of the current technology on only one material—indium tin oxide (ITO). Even though ITO still remains a highly efficient material, its high cost and the worldwide scarcity of indium creates an urgency for finding an alternative. In this regard, doped zinc oxide (ZnO), in particular, solution-processed aluminum doped ZnO (AZO), is emerging as a leading candidate to replace ITO due to its high abundant and exceptional physical/chemical properties. In this mini review, recent progress in the development of solution-processed AZO is presented. Beside the systematic review of the literature, the solution processable approaches used to synthesize AZO and the effect of aluminum doping content on the functional properties of AZO are also discussed. Moreover, the co-doping strategy (doping of aluminum with other elements) used to further improve the properties of AZO is also discussed and reviewed in this article.

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“…Many other reports can be found in which the effect of the Al doping level on the functional properties of AZO are described [ 53 , 57 , 58 , 59 ].…”

Section: Finding An Optimal Doping Level Of Al: Effect Of Al Doping O...mentioning

confidence: 99%

Recent Progress in Solution Processed Aluminum and co-Doped ZnO for Transparent Conductive Oxide Applications

Singh

Scotognella

2023

Micromachines

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“…Semiconductor materials with wide-bandgap such as ZnO, SiC, GaN, and TiO2 have been used for producing Ultraviolet (UV) PDs and solar cells 2 – 10 . Among them, ZnO has attracted researchers' attention due to its unique features, including cheapness, high chemical stability, strong radiation hardness, high charge carrier mobility, and most importantly, the 3.37 eV wide-bandgap 3 , 6 , 11 – 14 . Ordinary PDs require an external power supply that increases system power consumption, costs, and system volume.…”

Section: Introductionmentioning

confidence: 99%

The effect of electrode shape on Schottky barrier and electric field distribution of flexible ZnO photodiode

Jezeh

Efafi

Ghafary

2021

Sci Rep

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In this study, the effect of electrode shape difference on the height of the Schottky barrier and the electric field in flexible photodiodes (PDs) has been investigated. For this purpose, three different electrode designs were prepared on three flexible FR4 layers that were coated with Zinc Oxide (ZnO). The printing circuit board (PCB) method was used to create these copper electrodes. The asymmetry of the PD electrodes and the difference in the height of the Schottky barrier has led to the creation of self-powered PDs. The effect of the amount and shape of the distribution of internal electric fields generated in the PDs and its effect on the parameters of the PDs has been investigated with the help of simulations performed in COMSOL software. The photocurrent of the sample with circular and rectangular electrodes was equal to 470 µA in 15 V bias, which was twice as good as a sample with an interdigitated MSM structure. Also, this sample had the best response time among these three samples, which was equal to 440 ms.

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“…The optical detectors are one of the most important components in wearable electronic devices for measuring light in various applications [1]. Semiconductor materials with wide-bandgap such as ZnO, SiC, GaN, and TiO2 have been used for producing Ultraviolet (UV) PDs and solar cells [2][3][4][5][6][7][8][9][10]. Among them, ZnO has attracted researchers' attention due to its unique features, including cheapness, high chemical stability, strong radiation hardness, high charge carrier mobility, and most importantly, the 3.37 eV wide-bandgap [3,6,[11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Electrode Shape on Schottky Barrier and Electric Field Distribution of Flexible ZnO Photodiode

Jezeh

Efafi

Ghafary

2021

Preprint

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Three metal-semiconductor-metal (MSM) ultraviolet flexible self-powered photodiode (PDs) were fabricated, which differed in the shape of the electrodes. Here, the effect of the electrode's shape on the height of the Schottky barrier and the electric field in these PDs was investigated. They were prepared based on porous Zinc Oxide (ZnO) on fiberglass. Different shapes of the electrodes affect the height of the Schottky barrier in each metal-semiconductor contact and provide the basis for the formation of self-powered PDs. It also affects the electric field generated in the PD's bias condition and affects the PD's parameter. They were fabricated using the radio frequency (RF) sputtering technique, and copper electrodes with different shapes and a sample with interdigitated electrodes were created using the printed circuit board (PCB) method. The photocurrent of the sample with circular and rectangular electrodes was equal to 470 μA in 15V bias, which was twice as good as a sample with an interdigitated MSM structure. It also had the best photocurrent at 0V, which is equal to 0.8 μA. This sample had the best response time among these three samples, which was equal to 440 ms. It is noteworthy that the simulation data confirmed the practical results.

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A method for optimizing the electrical conductivity of Al:ZnO TCO films

Cited by 22 publications

References 16 publications

Recent Progress in Solution Processed Aluminum and co-Doped ZnO for Transparent Conductive Oxide Applications

Recent Progress in Solution Processed Aluminum and co-Doped ZnO for Transparent Conductive Oxide Applications

The effect of electrode shape on Schottky barrier and electric field distribution of flexible ZnO photodiode

The Effect of Electrode Shape on Schottky Barrier and Electric Field Distribution of Flexible ZnO Photodiode

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