A method for quantitative X-ray fluorescence analysis in the nanogram region

Aiginger, H.; Wobrauschek, P.

doi:10.1016/0029-554x(74)90352-8

Cited by 145 publications

(28 citation statements)

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“…To eliminate the resulting open degree of freedom, X-ray fluorescence (XRF) measurements have been performed. This technique and its derivates provide an element sensitive characterization method with sensitivities down to the nanogram scale and even below which in our setup is equivalent to an accuracy better than AE1% [4][5][6]. In addition to the high specific element sensitivity, these techniques provide the advantage of being non-destructive and, compared to other techniques like RBS or SIMS, no ultra high vacuum is needed.…”

mentioning

confidence: 93%

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Groh

Hums

Bläsing

et al. 2011

Physica Status Solidi (b)

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Quantum well structures for nitride-based LEDs are mainly grown in c-direction, whereby the quantum confined Starkeffect (QCSE) reduces the overlap of the electron and hole wave function and with it the internal quantum efficiency. The reason for that is the difference in polarization of the quantum well and barrier materials. In order to balance these polarizations, quaternary (AlGaIn)N layers for the later use as barrier material have been grown. In addition to the bandgap energy, another parameter, the polarization, can be controlled in this way. As a standard characterization method X-ray diffraction measurements have been performed. Due to the impossibility of fully determining the composition using this method, total reflection X-ray-fluorescence (TXRF) has been used to get the missing information.

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mentioning

confidence: 93%

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Groh

Hums

Bläsing

et al. 2011

Physica Status Solidi (b)

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“…However, it took almost 50 years until Yoneda and Horiuchi [3] in 1971 realized that this effect could be used to enhance the sensitivity of X-ray fluorescence (XRF) analysis by putting the sample on the surface of such a flat reflector. Subsequently, this technique was refined by Wobrauschek in his PhD thesis [4] followed by several authors [5][6][7][8] and called ''total reflection X-ray fluorescence analysis'' (TXRF).…”

Section: Introductionmentioning

confidence: 99%

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Meirer

Singh

Pianetta

et al. 2010

TrAC Trends in Analytical Chemistry

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Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) analysis is a high sensitive analytical technique that offers limits of detection in the femtogram range for most elements. Besides the analytical aspect, SR-TXRF is mainly used in combination with angle-dependent measurements and/or X-ray absorption near-edge structure (XANES) spectroscopy to gain additional information about the investigated sample. In this article, we briefly discuss the fundamentals of SR-TXRF and follow with several examples of recent research applying the above-mentioned combination of techniques to analytical problems arising from industrial applications and environmental research. ª

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“…An analysis in this angular range is called total reÑection x-ray Ñuores-cence (TXRF) analysis and is very sensitive to Ñuores-cence yields of atoms on or just below the surface. 5 If the angle of incidence is increased, the critical angle is passed and the penetration depth increases to typically some hundreds of micrometres. The critical angle is dependent on the density of the material.…”

Section: Theory Reñectivitymentioning

confidence: 99%

Applications of Glancing Incidence X-Ray Analysis

Leenaers

Boer

1997

X-Ray Spectrom.

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In many technological applications layered materials have an increasing importance. Almost complete characterization of such materials can be achieved with glancing incidence x‐ray analysis (GIXA). Within this technique, x‐ray reflectivity and angle‐dependent x‐ray fluorescence measurements are combined, resulting in a structural and chemical analysis of the samples. © 1997 by John Wiley & Sons, Ltd.

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A method for quantitative X-ray fluorescence analysis in the nanogram region

Cited by 145 publications

References 1 publication

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Applications of Glancing Incidence X-Ray Analysis

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