2009 59th Electronic Components and Technology Conference 2009
DOI: 10.1109/ectc.2009.5074000
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A method of “chemical flip-chip bonding” without loading and heating for ultra-fine chip-to-substrate interconnects

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Cited by 5 publications
(3 citation statements)
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“…iii) Conventional flip-chip bonding. Reproduced from (Yokoshima et al, 2009), with permission from IEEE. iv) Two conformable arrays bonded by MCP.…”
Section: Interconnections and Connection Strategiesmentioning
confidence: 99%
“…iii) Conventional flip-chip bonding. Reproduced from (Yokoshima et al, 2009), with permission from IEEE. iv) Two conformable arrays bonded by MCP.…”
Section: Interconnections and Connection Strategiesmentioning
confidence: 99%
“…The specific items include the following. Elemental technologies for chip stacking process are the following: low-volume, lowresistance, and low internal stress TSV structure using low-k organic insulator; [17] micro-pitch, high-density, and micro-bump connection formed by a thermo-compression method using cone-shaped micro-bumps; [18]- [20] electroless plating connection for power source pads where the power source pad electrodes are connected by direct Ni-B and Au electroless plating after chip stacking; [21] [22] interposer with passive components where the thin film capacitors or the chip capacitors are embedded in the substrate; [23] [24] and others. Evaluation and inspection technologies are as follows: evaluation of electrical property in local fine structures using high-speed sharp step signals with 10-ps rising time; [25] evaluation of 20 Gbps high-speed digital signal transmission; [26] evaluation of power supply wiring impedance using impedance analyzer for 10 Hz -40 GHz super-wide bandwidth; [27] inspection of good chips where electrical testing can be done at chip level using the membrane fine pitch contact probe; [28] boundary scan embedded test circuit where total electrical connection test of fine interconnects can be conducted after stacking; [29] high-speed inspection of coneshape micro-bumps where wafer level shape optical inspection can be conducted by laser illumination and high-speed highresolution image sensors; [30] and others.…”
Section: Elemental Technologies For the Manufacturing Process Of The mentioning
confidence: 99%
“…チ高密度超多チャンネル微細バンプ接続 [18]- [20] 、チップ積 層後の電源パッド電極間を直接めっき法で接続する電源 パッド間ブリッジめっき接続 [21] [22] 、薄膜コンデンサおよび チップコンデンサを基板内に埋め込んだ受動部品内蔵イン ターポーザ [23] [24] 等、評価検査技術として、10 ps 高速立 ち上がりステップ信号を用いた局所微 細構造電気特性評 価 [25] 、20 Gbps デジタル高速信号 伝 送評 価 [26] 、10 Hz-40 GHz の超広帯域に対応したインピーダンスアナライザに よる電源供給配線インピーダンス評価 [27] 、メンブレン微細 ピッチコンタクトプローブによるチップレベルの電気検査が 可能な良品チップ検査 [28] 、積層後に微細接続部の全数電 気接続検査が可能なチップ間接続バウンダリスキャン検査 [29] 、レーザー照明と高速高精細画像センサーにより全数形 状検査が可能な微細円錐バンプ高速検査 [30]…”
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