A method of using Si L-edge for O/Si and N/Si quantitative ratio analysis by electron energy loss spectroscopy (EELS)

Hierarchical microstructure growth in a precursor‐derived SiOC thin film prepared on silicon substrate

“…The broadened peak at 120 eV is a result of the amorphous O‐Si‐C units within the region with the residual peak at 115 eV from the Si‐O‐Si bonds 41,43 . The absence of a sharp peak at 108 eV confirms the absence of SiO 2 within the C‐rich area of the segregation 40,42 . Moreover, at the midpart of the map (black area), the C K‐edge is predominantly composed of broad π* peaks at 285 eV, which diminishes toward the gray area of the map with the rise of the σ* peak ≈300 eV which suggests the existence of a mixture of sp2 and sp3 carbons 19,41,44,45 .…”

“…The EELS map and selected area electron diffraction (SAED) pattern of the graphitic carbon domains are presented in Figure 6. The Si L 2,3 edge, which is highly visible in all the spectra can be divided into the energy loss near edge structure (ELNES) at 120 eV with an onset at 104 eV, and the extended energy loss fine structure (EXELFS) at 150 eV which is superimposed with the L 1 edge 40–43 . The broadened peak at 120 eV is a result of the amorphous O‐Si‐C units within the region with the residual peak at 115 eV from the Si‐O‐Si bonds 41,43 .…”

“…The Si L 2,3 edge, which is highly visible in all the spectra can be divided into the energy loss near edge structure (ELNES) at 120 eV with an onset at 104 eV, and the extended energy loss fine structure (EXELFS) at 150 eV which is superimposed with the L 1 edge. [40][41][42][43] The broadened peak at 120 eV is a result of the amorphous O-Si-C units within the region with the residual peak at 115 eV from the Si-O-Si bonds. 41,43 The absence of a sharp peak at 108 eV confirms the absence of SiO 2 within the Crich area of the segregation.…”

“…41,43 The absence of a sharp peak at 108 eV confirms the absence of SiO 2 within the Crich area of the segregation. 40,42 Moreover, at the midpart of the map (black area), the C K-edge is predominantly composed of broad π* peaks at 285 eV, which diminishes toward the gray area of the map with the rise of the σ* peak ≈300 eV which suggests the existence of a mixture of sp2 and sp3 carbons. 19,41,44,45 The white region on the map exhibited peaks of N K-edge at 400 eV which supports the presence of Si 3 N 4 within the segregation.…”