A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector*

Li, Xuanzhang; Sun, Liangling; Lu, Jinlei; Liu, Jie; Chen, Yue; Xie, Liang; Wang, Wenxin; Chen, Hong; Jia, Haiqiang; Wang, Lu

doi:10.1088/1674-1056/ab6969

Cited by 5 publications

(1 citation statement)

References 26 publications

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“…[13][14][15][16] Unfortunately, the confinement behavior of carriers is harmful to develop high-performance optoelectronic devices based on interband transitions in classical theory, which believes that the photo-generated carriers in the low-dimensional materials cannot escape from the potential well to form the photocurrent due to the quantized energy levels. [17] Fortunately, in recent years, we have experimentally observed great carrier extraction efficiencies (more than 90%) in InGaN multi-quantum wells (MQWs), [18][19][20] InGaAs MQWs, [21,22] and other lowdimensional materials systems [23,24] in PIN structures. The relevant experimental data and simulation results indicate that the carriers in the well are not confined, but escape from the well.…”

Section: Introductionmentioning

confidence: 99%

Reanalysis of energy band structure in the type-II quantum wells

Li 李,

Deng 邓,

Jiang 江

et al. 2024

Chinese Phys. B

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Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the Type-Ⅱ quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region are taken into account, the quantization energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

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Section: Introductionmentioning

confidence: 99%

Reanalysis of energy band structure in the type-II quantum wells

Li 李,

Deng 邓,

Jiang 江

et al. 2024

Chinese Phys. B

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Influence of Sb2 soaking on strained InAs0.8Sb0.2/Al0.2Ga0.8Sb multiple quantum well interfaces

Wang

Zhang

et al. 2021

AIP Advances

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InAsSb/AlGaSb systems have potential in mid-wavelength infrared detection and laser fields. Thus, their heteroepitaxial crystal quality and heterointerface are of great importance. Herein, the quantum well structure based on InAs0.8Sb0.2/Al0.2Ga0.8Sb was grown by interruption with and without Sb2 soaking methods by molecular beam epitaxy to optimize the interface quality and adjust the heterostructure strain. Narrow and well-defined satellite peaks in high-resolution x-ray diffraction patterns manifest good crystal quality of the sample with 15 s Sb2 soaking interruption. The relaxation of sample A without Sb2 soaking interruption is ∼23% calculated by the reciprocal space mappings, while there is no relaxation found in sample B with 15 s Sb2 soaking. High-resolution transmission electron microscopy and energy-dispersive spectroscopy were carried out. They showed sharp and coherent heterointerfaces generated by adding interruptions with an Sb2 overpressure before and after InAsSb layer growth. Furthermore, the atomic force microscopy images of a 5 × 5 μm2 scan area show that the surface of sample B with Sb2 soaking contains atomic steps with a root-mean-square roughness of 1.44 Å. The photoluminescence peaks of the samples located in the range of 3–4 µm show that these InAsSb/AlGaSb material systems have potential applications in mid-wavelength optoelectrical devices.

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Strain compensated type II superlattices grown by molecular beam epitaxy

Ning¹,

Yu²,

Sun³

et al. 2023

Chinese Phys. B

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This work investigates a strain compensation method for the growth of complex interband cascade laser structures. For thick InAs/AlSb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the lnAs sublayer is equal to the compressive strain energy in the AlSb sublayer. For the four-constituent active region, as the compressive strain in Ga0.65In0.35Sb alloy layer is large, a tensile strain was incorporated in the chirped InAs/AlSb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of 6 μm thickness was grown on GaSb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.

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A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector*

Cited by 5 publications

References 26 publications

Reanalysis of energy band structure in the type-II quantum wells

Reanalysis of energy band structure in the type-II quantum wells

Influence of Sb2 soaking on strained InAs0.8Sb0.2/Al0.2Ga0.8Sb multiple quantum well interfaces

Strain compensated type II superlattices grown by molecular beam epitaxy

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