A Method to Recover Defective Aluminum Interconnect Films in Mass Production

Chew, P.; Yeap, C.B.; Cham, Johnny; Goh, Anthony Teck Chee; Rossi, Nick; Singh, R.; Ong, Kristine; Toh, H.T.

doi:10.1109/tsm.2007.907620

Cited by 1 publication

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“…Titanium nitride (TiN) is a popular material in a variety of applications, because of its thermal stability, low contact resistance, low electrical resistivity, etch-stop capability, and resistance to corrosion . It is also recognized as an excellent barrier material in microelectronics applications as well as an antireflection coating in the interconnect stack. , TiN thin films are deposited by the chemical vapor deposition process (CVD) in the ultralarge scale integration (ULSI) circuits industry because of the superior conformality of the step coverage as compared to that obtained by physical vapor deposition (PVD) . The TiN layer is formed using TiCl 4 and NH 3 typically in the temperature of 500−800 °C in the chamber .…”

Section: Introductionmentioning

confidence: 99%

Kinetic Modeling of Temperature Dependence of TiCl₄ and NH₃ Surface Reaction in Trap Systems for CVD Reactors

Pang¹,

Jeong²,

Chae³

et al. 2009

Ind. Eng. Chem. Res.

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The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl 4 (NH 3 ) 2 is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical formation of TiCl 4 (NH 3 ) 2 in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120 °C. The deposition rate of TiCl 4 (NH 3 ) 2 is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl 4 (NH 3 ) 2 is surface-reaction-controlled.

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Section: Introductionmentioning

confidence: 99%

Kinetic Modeling of Temperature Dependence of TiCl₄ and NH₃ Surface Reaction in Trap Systems for CVD Reactors

Pang¹,

Jeong²,

Chae³

et al. 2009

Ind. Eng. Chem. Res.

View full text Add to dashboard Cite

show abstract

A Method to Recover Defective Aluminum Interconnect Films in Mass Production

Cited by 1 publication

References 8 publications

Kinetic Modeling of Temperature Dependence of TiCl₄ and NH₃ Surface Reaction in Trap Systems for CVD Reactors

Kinetic Modeling of Temperature Dependence of TiCl₄ and NH₃ Surface Reaction in Trap Systems for CVD Reactors

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A Method to Recover Defective Aluminum Interconnect Films in Mass Production

Cited by 1 publication

References 8 publications

Kinetic Modeling of Temperature Dependence of TiCl4 and NH3 Surface Reaction in Trap Systems for CVD Reactors

Kinetic Modeling of Temperature Dependence of TiCl4 and NH3 Surface Reaction in Trap Systems for CVD Reactors

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Product

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About

Kinetic Modeling of Temperature Dependence of TiCl₄ and NH₃ Surface Reaction in Trap Systems for CVD Reactors

Kinetic Modeling of Temperature Dependence of TiCl₄ and NH₃ Surface Reaction in Trap Systems for CVD Reactors