A methodology for robust, energy efficient design of Spin-Torque-Transfer RAM arrays at scaled technologies

Chatterjee, Subho; Rasquinha, Mitchelle; Yalamanchili, Sudhakar; Mukhopadhyay, Saibal

doi:10.1145/1687399.1687489

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…Also another researcher had been determined to figure out an energy efficient on chip available memory design using the spin torque RAM however our main intent of the research is to study the functioning of the various RAM styles on different frequency values [4]. Also an analyst had been researching on developing a methodology aimed at developing a highly durable, less energy consuming spin torque transfer RAM arrays for different technologies however, we have grossly focused on studying RAM styles at different frequency values [5].…”

Section: Related Workmentioning

confidence: 99%

Development of A Small Vocabulary Database for Bengali Speech Recognition

Huque¹,

Asad²,

Rokonuzzaman³

2016

IJSIP

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Section: Related Workmentioning

confidence: 99%

Development of A Small Vocabulary Database for Bengali Speech Recognition

Huque¹,

Asad²,

Rokonuzzaman³

2016

IJSIP

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“…Chatterjee et al [7] have pointed out that during reading a cell in a selected column, the unselected cells in the column contributes leakage current. This leakage acts as a circuit induced noise to the sensed current and can reduce the sensing accuracy.…”

Section: Sensing Reliability Degradationmentioning

confidence: 99%

“…This leakage acts as a circuit induced noise to the sensed current and can reduce the sensing accuracy. In [7], array level TMR or ATMR is proposed as metric to characterize the effect of this leakage current. ATMR is defined as the ratio of the difference of the array level read current (selected cell current + leakage current of unselected cells) while reading '0' and reading '1' with respect to the read current while reading '1'.…”

Section: Sensing Reliability Degradationmentioning

confidence: 99%

Analysis of thermal behaviors of spin-torque-transfer RAM

Chatterjee

Salahuddin

Kumar

et al. 2010

Proceedings of the 16th ACM/IEEE International Symposium on Low Power Electronics and Design

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We present an accurate model of the self-heating effect in the Spin-Torque-Transfer RAM (STTRAM) using finite-volumemethods and thermal RC based compact models. We couple device level thermal simulation to the self-heating phenomenon to show that self-heating during write operation can result in significant temperature increase in STTRAM which in turn adversely affect the read disturb, leakage energy and sensing accuracy.

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“…Further, during sensing an STTRAM cell, the current flowing through the bit line is sensed. [Chatterjee et al 2009] have pointed out 15:4 S. Chatterjee et al …”

Section: Introductionmentioning

confidence: 99%

Electrothermal analysis of spin-transfer-torque random access memory arrays

Chatterjee

Salahuddin

Kumar

et al. 2013

J. Emerg. Technol. Comput. Syst.

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Spin Transfer Torque RAM (STTRAM) is a promising candidate for fast, scalable, high-density, nonvolatile memory in nanometer technology. However, relatively high write current density and small volume of the memory device indicate the possibility of significant self-heating in the STTRAM structure. This article performs a critical analysis of the self-heating induced temperature variations in STTRAM. We perform a 3D finite volume method based study to characterize self-heating effect in a single cell. The analysis is extended for STTRAM arrays by developing a computationally efficient RC compact model based thermal analyzer. The analysis shows that self-heating can results in considerable increase in both steady-state value and transient change in temperature of individual cells. The effect is less pronounced at the array level and depends on the activity level, that is, number of active cells within an array size. The analysis further illustrates that self-heating negatively impacts electrical reliability metrics namely, read margin and detection accuracy; degrades cell performance; and modulates energy dissipation.

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A methodology for robust, energy efficient design of Spin-Torque-Transfer RAM arrays at scaled technologies

Cited by 8 publications

References 6 publications

Development of A Small Vocabulary Database for Bengali Speech Recognition

Development of A Small Vocabulary Database for Bengali Speech Recognition

Analysis of thermal behaviors of spin-torque-transfer RAM

Electrothermal analysis of spin-transfer-torque random access memory arrays

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