2009
DOI: 10.1109/tcad.2009.2030360
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A Methodology to Predict the Impact of Substrate Noise in Analog/RF Systems

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Cited by 11 publications
(9 citation statements)
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“…We choose this simulation tool, as it allows us to obtain fields induced inside lossy dielectric volumes. Moreover, previous studies have shown very good agreement between FEM simulations and measurements of on-chip passive isolation structures [2]. Fields induced in the substrate due to a current distribution of J = Iδ(r)ẑ from z = 0 to z = h 3 are simulated and compared to the ones obtained with the proposed model.…”
Section: Symmetric Study Case: Modeling Of Trenchesmentioning
confidence: 69%
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“…We choose this simulation tool, as it allows us to obtain fields induced inside lossy dielectric volumes. Moreover, previous studies have shown very good agreement between FEM simulations and measurements of on-chip passive isolation structures [2]. Fields induced in the substrate due to a current distribution of J = Iδ(r)ẑ from z = 0 to z = h 3 are simulated and compared to the ones obtained with the proposed model.…”
Section: Symmetric Study Case: Modeling Of Trenchesmentioning
confidence: 69%
“…Therefore, it is important to implement techniques to prevent interference from reaching sensitive nodes through the substrate. In this sense, passive isolation structures are commonly used to minimize unwanted coupling [2]. There are two main isolation mechanisms that can be implemented, either separately or combined.…”
Section: Introductionmentioning
confidence: 99%
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“…In order to prevent two sections of the same IC from interfering each other, highly resistive and/or charge-free sections are commonly embedded in order to increase isolation between them [5]. Their role is to discontinue the substrate top layer (active layer), where circuits are implemented, and thus interrupt the normal flow of currents that support interference propagation.…”
Section: Introductionmentioning
confidence: 99%