Three copper-plating suppressors are examined in three-additive baths: a polyethylene glycol ͑PEG͒, a polypropylene glycol ͑PPG͒, and a triblock copolymer of the two. Bis͑3-sulfopropyl͒-disulfide ͑SPS͒ is found to transition each to a state of nonsuppression, i.e., accelerate each, at a rate dependent on the suppressor molecule, the SPS concentration, and, to a lesser extent, the suppressor concentration. Using a planar microscale working electrode ͑d = 100 m͒, the kinetic currents of the plating reactions are observed without the influence of ohmic resistance, revealing far higher current densities than previously reported. Potentiostatic and galvanostatic experiments of additive adsorption at short times, t Ͻ 20 s, are compared quantitatively using a surfaceblocking model to transform the data to effective surface coverage, EFF , vs time. A major difference is found in SPS acceleration between galvanostatic and potentiostatic experiments, with the rate of change in suppression being proportional to the current density. This results in a constant rate of change in EFF under constant current but a self-reinforcing rate of change in EFF at constant potential. A simple additive model is introduced to characterize the results.The chosen material for interconnect manufacture in the semiconductor industry is electrodeposited copper, switched from aluminum in the late 1990s to achieve architecture scales below 250 nm. 1,2 The drive for increasing computing power continues, following the relation known as Moore's Law, and the characteristic scale of interconnects has fallen below 100 nm, approaching 30 nm and lower in the coming years. Electrodeposition of copper in highaspect-ratio features on this scale requires plating bath additives, which suppress and enhance deposition rates at the feature mouth and floor, respectively, to achieve bottom-up, void-free copper filling. This is referred to as superconformal filling or superfill.The additives required for superfill are a halide-ion promoter such as Cl − , a polyether suppressor such as polyethylene glycol ͑PEG͒, and a sulfur-containing molecule such as bis͑3-sulfopropyl͒-disulfide ͑SPS͒. Superfilling behavior results from an interaction of these additives, and this study focuses on plating behavior as a function of bath composition in order to formulate for decreasing feature sizes. It has been shown that the polyether suppressor and chloride ions coadsorb on the copper electrode surface, raising the overpotential required for a constant plating current. 3-7 This suppression becomes minor if the halide is not present and is a function of both halide and polyether concentration. 5 Other polyether molecules besides PEG ͓polypropylene glycol ͑PPG͒ and pluronic triblock copolymers of ethylene oxide ͑EO͒ and propylene oxide ͑PO͔͒ display the same characteristic suppression, although its degree is a function of the molecular structure. 8,9 A proportional increase of PO repeat units in the chain causes an increase in suppression. However, the presence of long, hydrophobic PO...