A micromechanical ultrasonic distance sensor with &amp;#x003E;1 meter range

Przybyla, Richard J.; Flynn, Anita M.; Jain, Vipul; Shelton, Stefon; Guedes, A.; Izyumin, Igor; Horsley, David A.; Boser, Bernhard E.

doi:10.1109/transducers.2011.5969226

Cited by 53 publications

(26 citation statements)

References 5 publications

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“…As a result, CMUTs are an alternative to piezo-based transducers and attract major research interest. Besides medical imaging and NDT, CMUTs were also widely studied for extensive applications such as blood flow measurement, distance sensing, pressure sensing, fluid properties measurement and cancer treatment [3,[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28].…”

Section: Motivationmentioning

confidence: 99%

Fabrication of capacitive micromachined ultrasonic transducers based on adhesive wafer bonding technique

Wong

Chen

et al. 2016

J. Micromech. Microeng.

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To my supervisor, Prof. Yeow. Thank you for giving me the opportunity to work in AMNDL. Thank you for supporting all the equipment/materials, and facility accesses. I know how expensive they are and without you, I would not have been able to execute my ideas and finish the projects. To my committees, Prof. Huissoon, Prof. Nieva and Prof. Stashuk, Thank you for all the comments and suggestions on my project. Additionally, I would say thank you to Prof. Huissoon. You gave me the to come to study in Waterloo and I will never forget the time I received your email where you asked me to come to Canada. To Prof. Cretu, thank you for agreeing to be the external committee and travelling to Waterloo for my defence. The CMUTs in this thesis were fabricated in G2N and TNFC. I would say thank Richard,

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Section: Motivationmentioning

confidence: 99%

Fabrication of capacitive micromachined ultrasonic transducers based on adhesive wafer bonding technique

Wong

Chen

et al. 2016

J. Micromech. Microeng.

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“…For this mode, a piezoelectric output constant, g constant ( e 31, f / ε r 33 ε 0 ), is important, where ε r 33 and ε 0 correspond to the relative dielectric constant and dielectric constant of vacuum, respectively. Considering both modes, the figure of merit (FOM) for pMUTs is expressed as ( e 31, f ) 2 / ε r 33 ε 0 [2,9]. This expression shows that the piezoelectric thin film with a high piezoelectric constant and a low dielectric constant is desired to improve the performance of pMUTs.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer

2018

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This paper presents a fibered-epitaxial lead zirconate titanate (PZT) thin film with intermediate features between the monocrystalline and polycrystalline thin films for piezoelectric micromachined ultrasound transducer (pMUT). The grain boundaries confirmed by scanning electron microscopy, but it still maintained the in-plane epitaxial relationship found by X-ray diffraction analyses. The dielectric constant (εr33 = 500) was relatively high compared to those of the monocrystalline thin films, but was lower than those of conventional polycrystalline thin films near the morphotropic phase boundary composition. The fundamental characterizations were evaluated through the operation tests of the prototyped pMUT with the fibered-epitaxial thin film. As a result, its piezoelectric coefficient without poling treatment was estimated to be e31,f = −10–−11 C/m2, and thus reasonably high compared to polycrystalline thin films. An appropriate poling treatment increased e31,f and decreased εr33. In addition, this unique film was demonstrated to be mechanically tougher than the monocrystalline thin film. It has the potential ability to become a well-balanced piezoelectric film with both high signal-to-noise ratio and mechanical toughness for pMUT.

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“…This is because the capacitance of the transduction gap in cMUTs remains linear when the displacement is much smaller than the nominal gap. In the case of pMUTs, the displacement range of the diaphragm is not limited by a back plate as cavity is typically etched on the back plane of the diaphragm [2]. Piezoelectric materials that have been commonly used in pMUTs include lead zirconate titanate (PZT), zinc oxide (ZnO) and AlN [1].…”

Section: Introductionmentioning

confidence: 99%

AlN-on-Si Square Diaphragm Piezoelectric Micromachined Ultrasonic Transducer with Extended Range of Detection

2018

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We present aluminum nitride (AlN) on silicon (Si) CMOS-compatible piezoelectric micromachined ultrasonic transducers (pMUTs) with an extended detection range of up to 140 cm for touchless sensing applications. The reported performance surpasses the current state-of-art for AlN-based pMUTs in terms of the maximum range of detection using just a pair of pMUTs (as opposed to an array of pMUTs). The extended range of detection has been realized by using a larger diaphragm allowed by fabricating a thicker diaphragm than most other pMUTs reported to date. Using a pair of pMUTs, we experimentally demonstrate the capability of range-finding by correlating the time-of-flight (TOF) between the transmit (TX) and receive (RX) pulse. The results were obtained using an experimental setup where the MEMS chip was interconnected with a customized printed circuit board (PCB) using Al wire bonds.

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A micromechanical ultrasonic distance sensor with >1 meter range

Cited by 53 publications

References 5 publications

Fabrication of capacitive micromachined ultrasonic transducers based on adhesive wafer bonding technique

Fabrication of capacitive micromachined ultrasonic transducers based on adhesive wafer bonding technique

Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer

AlN-on-Si Square Diaphragm Piezoelectric Micromachined Ultrasonic Transducer with Extended Range of Detection

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