A microscopic study of the effect of γ-radiation on Pb1 − x Mn x Se epitaxial films

Nuriev, I. R.; Mamishova, R. M.; Gadzhieva, N. N.; Рамазанов, М. А.; Sadygov, R. M.

doi:10.3103/s1068375513010092

Cited by 1 publication

(3 citation statements)

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“…Epitaxial films of Pb 1−x Mn x Se solid solutions have been obtained by molecular beam condensation (MBC) method in UVN-71P3 vacuum assembly, 10 −4 Pa vacuum, (T subs. = 663-673K) values of temperature of substrates and 8÷9Å/s values of condensation rate [12]. As a source, it has been used different chemical Pb 1−x Mn x Se solid solutions which are primarily synthesized, and as a source of evaporation, the Knudsentype hole prepared from graphite.…”

Section: Experimental Partmentioning

confidence: 99%

“…This method ensures the homogeneity of the layer and allows obtaining any profile surface. This method is also used widely in obtaining epitaxial films of Pb 1−x Mn x Se solid solutions [11,12].…”

Section: Introductionmentioning

confidence: 99%

“…The certain studies have been conducted in this direction, but the obtained results have not adequately reflected the information on the mechanism of interaction between the defects, initial and formed within radiation and on the nature of the defects [15]. [12]. As a source, it has been used different chemical Pb 1−x Mn x Se solid solutions which are primarily synthesized, and as a source of evaporation, the Knudsentype hole prepared from graphite.…”

Section: Introductionmentioning

confidence: 99%

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Electrophysical properties of Pb1−XMnXSe epitaxial films irradiated by γ-quanta

Madatov¹,

Mamishova²,

Mamedov³

et al. 2020

Turk J Phys

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Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb 1−x Mn x Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb 1−x Mn x Se (x = 0.01) epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.

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Section: Experimental Partmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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