2014
DOI: 10.1063/1.4872030
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A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers

Abstract: We report the control of semiconductor to metal transition in VO2(010) epilayers integrated with Si{100} substrates buffered with an NiO[111]/YSZ[100] intermediate layer. VO2 epitaxial thin films were grown at different thicknesses varying from 10 to 200 nm using pulsed laser deposition technique. An epitaxial relationship of VO2(010)‖NiO(111)‖ YSZ(001)‖Si(001) and VO2[100]‖NiO[110]‖ YSZ[100]‖Si[100] was established at room temperature. The crystallographic alignment across the VO2/NiO interface changes to VO2… Show more

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Cited by 38 publications
(32 citation statements)
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“…Advances in 0D [9], 1D [10] and 2D [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] material fabrication technologies have enabled various forms of nanoscale materials, which can be used as nanostructured anodes to accommodate the large volume changes during cycling. For example, silicon nanowire anodes were reported to retain high capacity during several charge-discharge cycles in spite of an initial volume change of 400% [27], while bulk silicon loses more than 80% of its capacity in less than 10 cycles due to pulverization [28].…”
Section: Importance Of Developing Platforms Enabling In-situ Electrocmentioning
confidence: 99%
“…Advances in 0D [9], 1D [10] and 2D [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] material fabrication technologies have enabled various forms of nanoscale materials, which can be used as nanostructured anodes to accommodate the large volume changes during cycling. For example, silicon nanowire anodes were reported to retain high capacity during several charge-discharge cycles in spite of an initial volume change of 400% [27], while bulk silicon loses more than 80% of its capacity in less than 10 cycles due to pulverization [28].…”
Section: Importance Of Developing Platforms Enabling In-situ Electrocmentioning
confidence: 99%
“…Advances in 0D [32], 1D [33] and 2D [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49] material fabrication technologies have enabled various forms of nanoscale materials, which increased the needs of in-situ ETEM studies through the closed-type approach, i.e. windowed gas cells.…”
Section: Windowed Gas Cells (Closed Type Etem)mentioning
confidence: 99%
“…In general, the characteristics of the thin films are inferior to those of single crystals. For bulk single crystals, thermal cycling across the transition temperature leads to large strains and sample cracking, whereas nanostructures and thin films are able to withstand thermal cycling without cracking . The switching temperature of VO 2 thin films can be tuned by doping and microstructural engineering.…”
Section: Introductionmentioning
confidence: 99%
“…The next big challenge, which our group tackled, was integration of VO 2 based materials on a computer chip Si(100) to make next‐generation solid state devices smart, where sensing, manipulation and response functions can be combined on the same platform. Our previous works addressed integration of VO 2 (010) on Si(100) using Ni(111)/YSZ(100) buffer layers, creating VO 2 (010)/Ni(111)/YSZ(100)/Si(100) heterostructures. However, the ultimate goal (Holy Grail) is to integrate VO 2 with Si(100) using cube‐on‐cube epitaxial buffer layers, which has been accomplished in this paper by using NiO(100)/MgO/(100)/TiN(100) buffer layers in novel VO 2 (011)/NiO(100)/MgO/(100)/TiN(100)/Si(00) heterostructures.…”
Section: Introductionmentioning
confidence: 99%