A mild electrochemical sulfur passivation method for GaAs(100) surfaces

Li, Z. S.; Hou, X. Y.; Cai, Wangfeng; Wang, Wei; Ding, Xinyi; Wang, Xun

doi:10.1063/1.360074

Cited by 20 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to prior studies, the electrochemical sulfidation promotes high oxidation states compounds like Ga2S5 and As2S5 on the surface [9,16]. These high oxidation state sulfides provide more stable surface passivation than the dipping type sulfidation method [9,16]. Surprisingly, in our study eFS samples showed low PLI increase (Figure 2) as compared to PLI observed on SF samples (Figure 2).…”

Section: Resultssupporting

confidence: 38%

“…Also, the peak of the photoluminescence data shifted by 6 nm as compared to the peak of photoluminesce data for the S sample. According to prior studies, the electrochemical sulfidation promotes high oxidation states compounds like Ga2S5 and As2S5 on the surface [9,16]. These high oxidation state sulfides provide more stable surface passivation than the dipping type sulfidation method [9,16].…”

Section: Resultsmentioning

confidence: 97%

See 1 more Smart Citation

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

Tyagi

2017

MRS Advances

View full text Add to dashboard Cite

Interaction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

show abstract

Section: Resultssupporting

confidence: 38%

Section: Resultsmentioning

confidence: 97%

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

Tyagi

2017

MRS Advances

View full text Add to dashboard Cite

show abstract

“…Recently, Chen et al have reported that (NH 4 ) 2 S treatment at 50 • C for 20 min as the best treatment condition for reducing the dark current of InGaP/GaAs heterojunction phototransistors (HPTs) [19]. Electrochemical passivation of GaAs surfaces with sulfide solutions has also been reported [20]. However, a systematic study of the process parameters during sulfur passivation of InGaAs/InP photodetectors has not been reported so far to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide

Sheela

DasGupta

2008

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this work, the effect of the process parameters during chemical and electrochemical passivation of InGaAs/InP PIN photodetectors using (NH 4 ) 2 S x (x >1) has been studied in detail. It has been observed that the time of passivation, temperature of the sulfide solution and illumination during electrochemical treatment play significant roles in the efficacy of the passivation process. These parameters therefore have to be carefully optimized in order to reduce the dark current of the detectors to a minimum value. The yield of the process is also found to improve with sulfur passivation.

show abstract

“…13) Sulfur passivation is widely used on III-V compounds, for example, InP and GaAs. 11,[14][15][16] However, the native oxides are rarely removed completely when using the (NH 4 ) 2 S solution. 17) Usually, conventional SiO 2 growth methods such as chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) are used for MOS fabrication.…”

Section: Introductionmentioning

confidence: 99%

“…18) InP was observed to have similar properties to GaAs for (NH 4 ) 2 S passivation. 15,16) In addition, these high-temperature methods have other disadvantages such as thermal stress, doping redistribution and material inter-diffusion. Liquid-phase-deposited SiO 2 (LPD-SiO 2 ) has many advantages such as low-temperature (room temperature is permissible) deposition, high uniformity, and selectivity, and low cost.…”

Section: Introductionmentioning

confidence: 99%

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Yen

Lee

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The characteristics of a liquid-phase-deposited SiO 2 film on InP were investigated. The mixture of H 2 SiF 6 and H 3 BO 3 aqueous precursors was used as the growth solution. SiO 2 on InP with (NH 4 ) 2 S treatment showed good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics were further improved with an ultrathin Si interface passivation layer (IPL) through reductions in Fermi-level pinning and interface state density. Moreover, during the SiO 2 deposition, the HF in the growth solution simultaneously and effectively removed native oxides from the Si-IPL and provided fluorine passivation on it. The Al/SiO 2 /Si-IPL/(NH 4 ) 2 S-treated InP MOS capacitor showed superior electrical properties. The leakage current density reached 6.9 ' 10 %9 and 1.6 ' 10 %7 A/cm 2 at +2 V. The interface state density reached 3.6 ' 10 11 cm %2 eV %1 with low frequency dispersion of 12.3%.

show abstract

A mild electrochemical sulfur passivation method for GaAs(100) surfaces

Cited by 20 publications

References 8 publications

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations

Contact Info

Product

Resources

About

A mild electrochemical sulfur passivation method for GaAs(100) surfaces

Cited by 20 publications

References 8 publications

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide

Reduction in interface state density of SiO2/Si-IPL/InP by fluorine and sulfur passivations

Contact Info

Product

Resources

About

Reduction in interface state density of SiO₂/Si-IPL/InP by fluorine and sulfur passivations