A Millimeter-Wave CMOS Dual-Bandpass T/R Switch With Dual-Band LC Network

Um, Youngman; Nguyen, Cam

doi:10.1109/lmwc.2017.2711535

Cited by 8 publications

(1 citation statement)

References 5 publications

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“…The performance of this T/R switch is summarised in Table 1, along with a comparison with other reported CMOS switches. Compared with other work using advanced processes such as BiCMOS process in [19][20][21], SOI CMOS process in [22,23] and 0.13-μm, 90-nm, 65-nm, and 28-nm standard CMOS process in [24][25][26][27][28][29], the differential T/R switch designed here has lowest IL as shown in Fig. 8 that is estimated to be 1.3 dB in the RX mode and 1.5 dB in the TX mode, respectively.…”

Section: Resultsmentioning

confidence: 96%

Differential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology

Zhao

Liu

et al. 2019

IET Microwaves, Antennas & Propagation

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Here, a Ku‐band transmit/receive (T/R) differential switch using the 180‐nm CMOS process is presented. The differential structure method is chosen to realise easy integration with other RF components. From 15–18 GHz, the measured insertion loss (IL) of the switch in the transmit (TX) and receive (RX) mode is 4.3 and 4.1 dB, respectively. The isolation is better than 20 dB in both modes. The design achieves a measured input 1 dB power compression point (InormalP1dB) of 13.5 dBm at 17 GHz. The differential T/R switch integrated in a Ku‐band‐phased array transceiver demonstrates that it is a promising technology for implementing fully integrated transceiver.

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