Simple, inexpensive,
and scalable strategies for metal oxide thin
film growth are critical for potential applications in the field of
gas sensing. Here, we report a general method for the synthesis of
free-standing oxide thin films via a one-step, surfactant-free hydrothermal
reaction wherein the oxide film forms at the air–water interface.
Using SnO2 and PdO as model systems, we show that the thin
films, thus formed, have lateral dimensions of the order of centimeters
and thickness of the order of tens of nanometers. Transmission electron
microscopy (TEM) has been used to understand the growth mechanism
of the films. On the basis of these studies, we propose that the metal
oxide particles formed in the bulk of the solution move to the interface
and get trapped to form a continuous, polycrystalline film. X-ray
diffraction (XRD), scanning electron microscopy (SEM), and atomic
force microscopy (AFM) measurements have been performed to understand
the structure, morphology, and thickness of the films. Thickness tunability
by varying the precursor concentration has been explored, which in
turn affects optical and gas sensing properties. Thin SnO2 films (30 nm) revealed an ultrasensitive response (R) of 25000% to 6 ppm of H2S at 150 °C while demonstrating
25 ppb (R = 19.3%) as the experimental lowest limit
of detection. The selectivity of these nanostructured films toward
H2S stands tall among the other interfering gases by exhibiting
an ∼2 orders higher response magnitude. Furthermore, these
thin films are highly stable at elevated temperatures.