A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices

Abstract

Due to the unique combination configuration and the formation of built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities in improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response...

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

“…1−3 However, contemporary semiconductor photodetectors face a myriad of challenges in terms of high-speed response, sensitivity, and material selection, necessitating novel materials and structures to enhance device performance and meet the demands of future applications. 4,5 Recently, the emergence of two-dimensional materials has injected new hope into the field of semiconductor optoelectronics. 6−9 Two-dimensional materials such as graphene 10 and transition metal dichalcogenides (TMDs) 11 have garnered significant attention for their unique electrical and optical properties, presenting enormous potential for the development of photodetectors.…”

“…Superior photodetectors play a pivotal role in modern technology, spanning fields such as communication, information technology, and optoelectronics. − However, contemporary semiconductor photodetectors face a myriad of challenges in terms of high-speed response, sensitivity, and material selection, necessitating novel materials and structures to enhance device performance and meet the demands of future applications. , …”