A mm-Wave Switched-Capacitor RFDAC

Nguyen, Hieu; Walling, Jeffrey S.; Zhu, Anding; Staszewski, Robert Bogdan

doi:10.1109/jssc.2022.3142718

Cited by 13 publications

(4 citation statements)

References 42 publications

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“…Nguyen et al implemented an interleaved switchedcapacitor DAC in 22 nm FDSOI, the first of its kind [84]. This design uses a frequency tripler in the output stage, pushing the linear output power above 20 dBm.…”

Section: Balteanu Et Al Propose Using An Array Of 4 Identical 2-bitmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change. Standards that define the operation of next-generation mobile networks are moving away from the traditional radio frequency (RF) spectrum and into millimeter-wave (mm-wave) bands. The physical layer (PHY) for IEEE 802.11ad Wi-Fi and 802.11ay WLANs dictates operation in the unlicensed 60 GHz band. 5G New Radio (NR) applications utilize selected bands from 26 to 39 GHz. Additionally, newly developing Fourth Industrial Revolution (4IR) applications depend on 5G NR as an enabling technology. Satellite communications and wireless backhaul will occur in E-band between 70-86 GHz. Increasing demands from the market cause designers to push boundaries, and the development of standards guide technological advances. Perhaps the most substantial improvements are observed in integrated circuit technology. This article details the major Si processes, namely Complementary Metal Oxide Semiconductor (CMOS) and SiGe Bipolar CMOS (BiCMOS), and their foray into the wireless transceiver space traditionally dominated by GaAs. CMOS and BiCMOS have become popular in many communities because of their low fabrication cost and excellent digital integration capabilities. RF performance has matured to where Si is a serious competitor for tried-and-tested III-V technologies. Some extreme environments and sophisticated applications still favor GaAs and GaN, however. GaAs, for example, can yield unparalleled output power and excellent noise figure performance, albeit at a higher cost and increased design and manufacturing complexity due to the multi-chip nature of these circuits.INDEX TERMS 5G new radio (NR), broadband communication, cellular vehicle-to-everything (C-V2X), CMOS, fourth industrial revolution (4IR), Internet of Things (IoT), millimeter-wave, SiGe BiCMOS.

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Section: Balteanu Et Al Propose Using An Array Of 4 Identical 2-bitmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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“…Quadrature/polar dual-mode reconfigurable [2] ; wideband DTC/DPC-based phase modulation [3,4] ; sliding digital-IF quadrature DTX [5] Output power Communication range Power combining with stacked device [6,7] ; multiphase beamforming [8] ; IQ cell-sharing [9] Power efficiency Battery life Time-interleaving Doherty class-G [10] ; switched transformer [11] ; multi-subharmonic switching [12] ; class-G [13,14] ; Doherty [15] ; complex-domain Doherty [9] ; hybrid Doherty and impedance boosting [16,17] ; class-G Doherty [18] Linearity Data error rate and modulation type Phase nonlinearity compensation [15] ; switch impedance linearization and code mapping [19] ; ADC background correction [20] ; tri-phasing modulation [21] Signal bandwidth Data rate and license cost Dual-band matching [22,23] ; edge combining class-D [24] ; mm-wave power-DAC [25] ; doubled-edge-triggered RFDAC [26]…”

Section: Performance Metric System Effectmentioning

confidence: 99%

Digital-intensive RFIC design techniques for transmitters in ISSCC 2023

Yin¹,

Xu²

2023

J. Semicond.

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“…Meanwhile, the routing parasitics also deteriorate P out and efficiency. Recently, the millimeter-wave digital TXs are proposed with improved P out and efficiency [46], [47], [48]. The currentmode millimeter-wave quadrature digital TX using synthesized impedance variation compensation is proposed for 5G wireless and backhaul communication [46].…”

Section: Introductionmentioning

confidence: 99%

“…The parasitic of routing is compensated by the notched-matching network with improved efficiency. A millimeter-wave quadrature switched capacitor RFDAC is proposed with good linearity [47]. The edge-combining technique is introduced to allow the switching transistors to operate properly at millimeter-wave with high efficiency.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-Wave Quadrature Mixed-Mode Transmitter With Distributed Parasitic Canceling and LO Leakage Self-Suppression

Yang

Qian

Zhou

et al. 2023

IEEE J. Solid-State Circuits

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In this article, a 2 × 9-bit millimeter-wave quadrature mixed-mode transmitter (TX) with distributed parasitic canceling and LO leakage self-suppression is proposed. The mixed-mode architecture uses both digital switched capacitor power amplifier (SCPA) and analog amplifier to achieve high output power and enhanced peak/average efficiency at millimeterwave. In addition, the distributed parasitic canceling with 3-D shielded horizontal capacitor (3-D SHCAP) is adopted to decrease the passive loss for improved efficiency. Besides, the LO leakage self-suppression is introduced, which benefits to linearity and dynamic range. The proposed quadrature mixed-mode TX is implemented and fabricated in the 40-nm CMOS technology. With 1.1/2.2-V supply, it achieves saturated output power of 24.03 dBm with peak system efficiency (SE) of 31.5% at 24 GHz. It also exhibits 23.6% SE for 6-dB PBO at 24 GHz due to Doherty operation. It supports 400-MHz 64QAM signal with an average output power (i.e., P avg ) of 16.37 dBm, an EVM of −29.6 dB, and an ACLR −29.98 dBc. For 200-MHz 256QAM, it exhibits 15.21 dBm P avg with an EVM of −30.9 dB and an ACLR −31.71 dBc at 24 GHz.

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A mm-Wave Switched-Capacitor RFDAC

Cited by 13 publications

References 42 publications

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

Digital-intensive RFIC design techniques for transmitters in ISSCC 2023

Millimeter-Wave Quadrature Mixed-Mode Transmitter With Distributed Parasitic Canceling and LO Leakage Self-Suppression

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