A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors

Abstract

Based on the device physics, a mobility model for organic thin-film transistors (OTFTs) is presented considering temperature and contact resistance. As a function of the surface potential, the mobility model including hopping mechanism is able to explain the dependence of temperature and gate bias. The contact resistance is also considered in order to extract the correct mobility. Furthermore, with the assumption that the trapped carrier concentration dominates Poisson's equation, and combining the mobility model, a DC compact model accounting for contact resistance and temperature is proposed suitable for the temperature scaling from 83 to 295K. Through the extensive comparisons between the model results and the numerical iteration or experimental data, the validity of the mobility and current models is strongly supported. INDEX TERMS Mobility model, organic thin-film transistors, temperature, contact resistance, hopping, DC model.