A model for damage release in ion-implanted silicon

Cerofolini, G. F.; Meda, L.; Volpones, C.

doi:10.1063/1.340432

Cited by 28 publications

(8 citation statements)

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“…Interestingly enough, fitting together the data at constant E and n > 500 with the data at constant n and E in the range (225 § 300)keV indicates No = 10000(+ 500), which coincides with the value calculated with the hot cloud model of Cerofolini and Medal9,10] and with the numerical analysis of Diaz de la Rubia et al [11]. The parameter a results in the interval (1.5 + 3.0).…”

Section: -Summary Of Brookhaven Experimentssupporting

confidence: 54%

“…Hot-cloud hypothesis: because of the space-time correlation of the original event [the impingement of the (D2 0)~ cluster], if n is large enough, the collisional cascades produced by single atoms superimpose and form a unique cascade so dense as to be considered a hot cloud [9,10]; as known from low-energy ion implantation [4,11] This hypothesis by itself is however unable to explain the observed fusion yields.…”

Section: -Summary Of Brookhaven Experimentsmentioning

confidence: 95%

“…(These assumptions gave meaningful results in the description of the amorphization of silicon resulting from the impact of silicon projectiles impinging at similar velocities, of approximately 150 eV/a.m.u. [9,10]). The critical ramification Z is given by the condition 2n-2 z = 2n + N, so that Z ---2 § 5 in relation to the cluster composition; assuming p = 0.9, the coefficient v is in the interval 0.6 + 0.8; MAR-LOWE calculations for typical cases result also in V between 0.6 and 0.8.…”

Section: -Summary Of Brookhaven Experimentsmentioning

confidence: 97%

“…2 and prove that the model is able to reproduce the experimental behaviour. Moreover, the best estimate of N obtained by fitting the data at variable n and at variable E coincides with the estimate (N --1.104) based on the hot-cloud model of Cerofolini and Meda [9,10], with the molecular dynamics simulations of Diaz de la Rubia et al [11] and with binary collision calculations (MARLOWE [14]) for typical cases. The resulting function interpolates satisfactorily, at this level investigation, all the data for 100 < n < 1350---in a way, the hot-cloud model removes the contradiction shown in fig.…”

Section: -Summary Of Brookhaven Experimentsmentioning

confidence: 97%

“…Taking ~ = 1 as done by Carraro et al [7], one has V = 1 and E* = 33 eV; taking p = 0.9 (as done by Cerofolini and co-workers in the description of silicon resulting from the impact of silicon projectile impinging at similar velocities, of approximately 150 eV/a.m.u. [9,10]) and X --2 + 5 in relation to the cluster composition, v ranges between 0.6 and 0.8, and E* in the interval (20 + 26) eV. In all cases the activation energy for the precursor formation is approximately twice the ionization energy E0 of the deuterium atom.…”

Section: -The Activated Precursormentioning

confidence: 98%

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Deuterium-deuterium fusion by an activated precursor

Cerofolini¹,

Dierckx

Para

et al. 1991

Il Nuovo Cimento D

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Summary. --A general scheme is proposed for the interpretation of the phenomena involving low-energy hydrogen-isotope fusion. This scheme is especially developed for the interpretation of the fusion rate observed after the impact of heavy-water clusters (D20)~, 25 ~< n <~ 1350, onto targets of titanium deuteride TiD. It is shown that 1) the impinging energy of large clusters or molecules is equiparted among a lot of target atoms which are brought in collective motion; 2) data can conveniently be represented in an Arrhenius plot; 3) this plot suggests that fusion is a thermally activated process from a metastable precursor; 4) the activation energy for the precursor formation is E* ---2 E0 (E0 being the electron binding energy in the hydrogen atom), and 5) the activated precursor can reasonably be identified with the metastable binuclear heliumlike (D § D+)2e -atom. PACS 25.45.Z -2H-induced reactions and scattering. PACS 79.20.Nc -Atom, molecule, and ion impact. PACS 52.50.Dg -Plasma sources.

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Section: -Summary Of Brookhaven Experimentssupporting

confidence: 54%

Section: -Summary Of Brookhaven Experimentsmentioning

confidence: 95%

Section: -Summary Of Brookhaven Experimentsmentioning

confidence: 97%

Section: -Summary Of Brookhaven Experimentsmentioning

confidence: 97%

Section: -The Activated Precursormentioning

confidence: 98%

See 3 more Smart Citations

Deuterium-deuterium fusion by an activated precursor

Cerofolini¹,

Dierckx

Para

et al. 1991

Il Nuovo Cimento D

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Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold. Aanalysis by simulation of X-ray rocking curves

Fabbri¹,

Servidori²,

Zani³

et al. 1989

Phys. Stat. Sol. (a)

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Simulation of double‐crystal X‐ray rocking curves is used as the analysis technique to evaluate amount and depth‐distribution of the damage produced in silicon by ion implantation. The implants are made at room temperature with 1 × 1014 cm−2, 100 keV silicon ions in such conditions as to prevent appreciable target heating during bombardment. The lattice damage at any depth in the surface layer is below the critical level for complete amorphization. An isochronal annealing carried out after the implant shows two distinct steps of damage recovery, the former in the range 50 to 200 °C and the latter between 500 and 800 °C. Isothermal heatings made in correspondence with these stages of strain relief enable the two defect decays to be identified as single activated processes with activation energies of 1.1 and 3.7 eV, respectively. The processes can be interpreted as thermal removals of isolated amorphous regions (low temperature) and interstitial clusters (high temperature) present in the crystalline surface layer after the implant. It is also verified that amorphous region dissolution is responsible for the spontaneous decrease of the lattice strain occurring in an implanted sample kept at room temperature.

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The Extended Nature of Pointlike Defects in Silicon

Cerofolini¹

1989

Point and Extended Defects in Semiconductors

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A model for damage release in ion-implanted silicon

Abstract: Use of type II (end of range) damage as ''detectors'' for quantifying interstitial fluxes in ionimplanted silicon

Cited by 28 publications

References 0 publications

Deuterium-deuterium fusion by an activated precursor

Deuterium-deuterium fusion by an activated precursor

Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold. Aanalysis by simulation of X-ray rocking curves

The Extended Nature of Pointlike Defects in Silicon

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