A model for single-event transients in comparators

Abstract

A two-step modeling approach is developed for single-event transients in linear circuits that uses the PISCES device simulation program to calculate transient currents in key internal transistor structures. Those currents are then applied at the circuit level using the SPICE circuit analysis program. The results explain the dependence of transients on input differential voltage, as well as the dependence of transient signals on output loading conditions. Error rate predictions based on laboratory testing and modeling are in close agreement with the observed number of "trips" in comparators within power control modules that have operated in a deep space environment for nearly three years.

Observation and analysis of single event effects on-board the SOHO satellite

“…The early suspicion that these events were caused by transient spikes produced by a small number of linear integrated circuits induced by cosmic rays or protons, has been substantiated through test results and predictions presented in this paper. This analysis also confirms the importance of performing SEE tests with application configurations and operating conditions as close as possible to those used in the actual mission [5], [10]. Particularly, in the case of linear ICs, the accuracy of predictions is strongly dependent on representative test conditions applied during ground testing.…”

“…Table V summarizes obtained transient SEU results. Overall no latchups were recorded in the LM/PM139, UC1707J, and UC1842J tests, but there were surprisingly high levels of transient SEUs. Observed transient SEU levels were confirmed [5], [10] to depend strongly on test conditions, input levels and loads. Most SOHO designs appear to be sensitive and are able to cause switching if triggered by heavy ions or protons.…”

Applicability of circuit macromodeling to analog single-event transient analysis

“…Previous efforts in experimental testing and computer simulation have enhanced the understanding of fundamental aspects of SET generation and propagation in analog circuits. This was achieved through establishing correlations between the deposited charge resulting from a localized ionization of the semiconductor, the location of the heavy-ion strike inside the modeled IC, and the perturbations observed in the functionality of the circuit application under test [1]- [4].…”

Modification of the LM124 Single Event Transients by Load Resistors

“…An example of this is the capability of these devices to bias output loads if a critical current value, so-called short-circuit current, is not exceeded. Previous papers have dealt with the influence of the output resistance in comparators showing that there is a clear dependence of the transient shape on the resistance value [1], [13]- [15]. In fact, these works revealed that the cross-section as well as the duration of the single events strongly depend on the resistive load connected to the device output.…”