A Model for the Calculation of the Threshold Current of SCH-MQW-SAS Lasers

Wenzel, H.; Wünsche, H.‐J.

doi:10.1002/pssa.2211200241

Cited by 22 publications

(15 citation statements)

References 39 publications

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“…Eqs. (31) or (53) can be conveniently solved by the "Treat Power as a Parameter" (TPP) method as introduced in [68] and used in [89]. It is based on the observation, that the relative propagation factor ∆β ν in (31) or imaginary part Im(β ν ) in (53) can be considered to be a function of the bias, the local power and the unknown wavelengths of the lasing and nonlasing modes.…”

Section: Stationary Drift-diffusion Based Simulation a Basic Equmentioning

confidence: 99%

“…Simulation tools using a PML boundary condition often fail to calculate the radiation losses of leaky waveguides correctly [52]. Using a transfer-matrix based method, the radiation loss can be exactly calculated by solving a complexvalued transcendental equation [53], [54]. We will give here the results of a worked example which can be used as a benchmark.…”

Section: G Worked Examplementioning

confidence: 99%

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Basic Aspects of High-Power Semiconductor Laser Simulation

Wenzel

2013

IEEE J. Select. Topics Quantum Electron.

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Abstract-The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the investigation of modal instabilities and filamentation effects are presented and the impact of the thermal-lensing effect on the spatiotemporal behavior of the optical field is demonstrated. We reveal the factors that limit the output power at very high injecton currents based on a numerical solution of the thermodynamic based drift-diffusion equations and elucidate the role of longitudinal spatial holeburning.

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Section: Stationary Drift-diffusion Based Simulation a Basic Equmentioning

confidence: 99%

Section: G Worked Examplementioning

confidence: 99%

Basic Aspects of High-Power Semiconductor Laser Simulation

Wenzel

2013

IEEE J. Select. Topics Quantum Electron.

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“…A grating coupling coefficient, k » 0.96cm -1 is predicted in this configuration, using techniques as described in [4]. A fit to the measured amplified spontaneous emission (ASE) spectra of single transverse-mode ridge waveguide lasers (L = 1500µm, W » 5µm) below threshold enabled measurements of k [5].…”

Section: Grating Fabricationmentioning

confidence: 99%

Buried DFB gratings floating in AlGaAs with low oxygen contamination enable high power and efficiency DFB lasers

Schultz

Crump

Maaßdorf

et al. 2012

2012 IEEE Photonics Society Summer Topical Meeting Series

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We report a novel design and fabrication technique for buried overgrown DFB gratings floating in AlGaAs. In-situ etching enables low oxygen contamination and results in > 60% efficient and 10W reliable high power DFB lasers.Introduction: Diode lasers with monolithically integrated Bragg gratings for internal wavelength stabilization are of growing importance for applications such as pumping narrow absorption bands in gain media of solid state lasers, fiber lasers and amplifiers. In this field, broad area (BA) lasers with distributed feedback (DFB) gratings are promising candidates. Buried DFB gratings can be understood as large area optical nanostructures, and they must be compatible with the high current densities that flow through BA lasers. Therefore they must fulfill several specific requirements. Firstly, they have to provide sufficient optical feedback for wavelength stabilization. Secondly, the DFB grating should not obstruct the carrier transport and thirdly, the grating should not increase the internal optical loss. Finally, crystal defects have to be avoided for good reliability. It is particularly important to eliminate oxygen contamination, as this is a rapid carrier trap [1], especially in AlGaAs-based designs. We present an optimized design and grating fabrication technology and analyze the oxygen contamination, coupling coefficient, optical loss and series resistance of DFB gratings in an epitaxy structure for high power lasers [2]. We show that oxygen contamination can be largely eliminated, enabling DFB-BA lasers using this design to achieve peak power conversion efficiency > 60% and reliable optical output power > 10W.

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“…The model makes use of the experimental light-voltagewavelength-current characteristics. Employing the effective index method, the lateral field profile (x) and the propagation constant β are obtained as solutions of a one-dimensional waveguide equation (Wenzel and Wünsche 1990) subject to a homogeneous Neumann boundary condition at x = 0 for the even modes and a radiative boundary condition at infinity assuming an outgoing wave as described by Wenzel and Wünsche (1990).…”

Section: Modellingmentioning

confidence: 99%

Thermal lensing in high-power ridge-waveguide lasers

2008

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The lateral farfield characteristics of ridge-waveguide (RW) lasers emitting around 1,064 nm with an output power of 1.3 W at an injection current of 2 A were measured and modeled. Due to trenches with widths between 2.5 and 20 µm defining the narrow RW, radiation leaks out into the outer regions which suppresses higher-order modes, but which can also lead to a double-peaked lateral farfield of the fundamental mode. A simple model taking into account the thermal lensing effect explains well the lateral farfield behavior observed.

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A Model for the Calculation of the Threshold Current of SCH-MQW-SAS Lasers

Cited by 22 publications

References 39 publications

Basic Aspects of High-Power Semiconductor Laser Simulation

Basic Aspects of High-Power Semiconductor Laser Simulation

Buried DFB gratings floating in AlGaAs with low oxygen contamination enable high power and efficiency DFB lasers

Thermal lensing in high-power ridge-waveguide lasers

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