1991
DOI: 10.1016/0168-9002(91)90795-r
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A model for the performance of silicon microstrip detectors

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1991
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Cited by 20 publications
(3 citation statements)
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“…, where l dr is the drift path and k = 2D/v dr . D is taken to be the hole diffusion coefficient: D = 11 cm 2 /s [7] and v dr = µ • E, where the hole mobility is taken to be µ = 450 cm 2 /Vs [7] and E is the electric field per unit length (which depends on the bias voltage). This model gives a qualitatively good description of the beam test data (see figure 4) and tuning of the model parameters is currently under way.…”
Section: Simulation Of the Silicon Pixel Detectormentioning
confidence: 99%
“…, where l dr is the drift path and k = 2D/v dr . D is taken to be the hole diffusion coefficient: D = 11 cm 2 /s [7] and v dr = µ • E, where the hole mobility is taken to be µ = 450 cm 2 /Vs [7] and E is the electric field per unit length (which depends on the bias voltage). This model gives a qualitatively good description of the beam test data (see figure 4) and tuning of the model parameters is currently under way.…”
Section: Simulation Of the Silicon Pixel Detectormentioning
confidence: 99%
“…In each GEANT step, the diffusion variance is evaluated: σ diff = k √ l dr , where l dr is the drift path and k = 2D/v dr . D is taken to be the hole diffusion coefficient: D = 11 cm 2 /s [7] and v dr = µ · E, where the hole mobility is taken to be µ = 450 cm 2 /Vs [7] and E is the electric field per unit length (which depends on the bias voltage). This model gives a qualitatively good description of the beam test data (see figure 4) and tuning of the model parameters is currently under way.…”
Section: Simulation Of the Silicon Pixel Detectormentioning
confidence: 99%
“…Ohmic and diffusive transport are accounted for, in a simplified manner, in the work by Sailor et al [6], whose approach has been subsequently extended in [7] and [8]. Here, the whole set of Eqs.…”
Section: The Simulation Packagementioning
confidence: 99%