2011
DOI: 10.1007/s11664-011-1855-y
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A Model for Understanding Electromigration-Induced Void Evolution in Dual-Inlaid Cu Interconnect Structures

Abstract: Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-elect… Show more

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Cited by 6 publications
(1 citation statement)
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“…In processing of piezoelectric solids, various structural defects such as inclusions and voids in the piezoelectric solid are often generated, which have detrimental influences on the electromechanical coupling function of piezoelectric solid (Gosling and Willis, 1995; Ru, 2000). The migration motion of defects (voids) in solids has been described by means of different methods, where driven mechanisms for the migration movement of voids are surface diffusion and volume diffusion induced by thermal gradient, stress gradient, and electric potential gradient exerted on the solid (Cho et al., 2010; Desai et al., 2010; Pete et al., 2012). An electroelastic analytical method for an orthotropic piezoelectric solid with defects is presented in Sosa and Khutoryansky (1996) and Hou and Yang (1998) in which a general solution is given to describe stress concentrations that arise in the vicinity of circular and elliptical holes, and may be used as the reference to analyse the stress gradient field in orthotropic piezoelectric solid.…”
Section: Introductionmentioning
confidence: 99%
“…In processing of piezoelectric solids, various structural defects such as inclusions and voids in the piezoelectric solid are often generated, which have detrimental influences on the electromechanical coupling function of piezoelectric solid (Gosling and Willis, 1995; Ru, 2000). The migration motion of defects (voids) in solids has been described by means of different methods, where driven mechanisms for the migration movement of voids are surface diffusion and volume diffusion induced by thermal gradient, stress gradient, and electric potential gradient exerted on the solid (Cho et al., 2010; Desai et al., 2010; Pete et al., 2012). An electroelastic analytical method for an orthotropic piezoelectric solid with defects is presented in Sosa and Khutoryansky (1996) and Hou and Yang (1998) in which a general solution is given to describe stress concentrations that arise in the vicinity of circular and elliptical holes, and may be used as the reference to analyse the stress gradient field in orthotropic piezoelectric solid.…”
Section: Introductionmentioning
confidence: 99%