2016
DOI: 10.12693/aphyspola.130.1209
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A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Abstract: The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that descri… Show more

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Cited by 3 publications
(2 citation statements)
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“…For example, the quantitative expressions of the transition probabilities of radiative and non-radiative recombination processes in InGaN quantum well (QW) active layers, such as their temperature and carrier-density dependences, have not been clarified although there are many reports. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Generally, photoluminescence (PL) lifetime τ PL , which corresponds to the carrier lifetime under photo-excitation, is described by the following equation,…”
Section: Introductionmentioning
confidence: 99%
“…For example, the quantitative expressions of the transition probabilities of radiative and non-radiative recombination processes in InGaN quantum well (QW) active layers, such as their temperature and carrier-density dependences, have not been clarified although there are many reports. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Generally, photoluminescence (PL) lifetime τ PL , which corresponds to the carrier lifetime under photo-excitation, is described by the following equation,…”
Section: Introductionmentioning
confidence: 99%
“…In the case of the PL energy, however, the situation can be different, and the observed behavior of the PL energy of the alloy as a function of temperature may consist of three regions: (i) A low-temperature region, where the PL energy decreases with increasing temperature; (ii) An intermediatetemperature region, where the PL energy increases with increasing temperature; and (iii) A high-temperature region, where the PL energy again decreases with increasing temperature. The observation of such behavior, which is usually referred to as 'S-shape' behavior, has been extensively studied and reported in the literature for InGaN alloys and InGaN/GaN QWs, and was explained by thermally induced changes in the degree of carrier localization that were caused by potential fluctuations that were due to indium clustering [17][18][19][20][21][22][23]. Interestingly, 'S-shape' behavior has been also reported for AlGaN alloys with low Al contents [24,25] and for GaN/AlGaN heterostructures [26], where the localization cannot be due to alloy inhomogeneities in the wells, since they consist of binary GaN.…”
Section: Introductionmentioning
confidence: 99%