A model of the interdiffused multilayer process

Svoronos, Spyros A.; Woo, Wilbur W.; Irvine, S.J.C.; Sankur, H.; Bajaj, J.

doi:10.1007/bf02655400

Cited by 16 publications

(11 citation statements)

References 19 publications

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“…We found that precursor concentration changes fit the model proposed by Svoronos, Woo, Irvine, Sankur, and Bajaj [4]. Precursor concentration changes in the growth zone can be described by a combination of two extreme conditions, plug flow (PF) and perfectly mixed tank (PMT).…”

Section: Precursors' Measurements With Ir Gas Analysersupporting

confidence: 74%

Insight into precursor kinetics using an infrared gas analyser

Kłos

Piotrowski

Gawron

et al. 2010

Opto-Electronics Review

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Precursor kinetics and its influence on MOCVD growth was investigated using an infrared absorption gas analyser. After several refinements, the analyser was able to be used to measure time dependent concentrations of precursors in the growth zone. Changes were induced by periodic switching of corresponding bubbler valves. It was proved that precursor transport could be accurately described by the combined plug flow and perfectly mixed tank model. The studies of the precursor trans-port are strategically important for the growth of multilayer structures, when growth time of particular layers becomes comparable to delays and time constants. One example is quantum wells or interdiffused multilayer process (IMP) used in the growth of Hg1-xCdxTe heterostructures, where knowledge of precursor transport characteristics is vital for understanding and properly designing that growth. The model parameters, sc. the delays and time constants for DIPTe and DMCd, were evaluated for various growth conditions and then successfully used to optimise the growth of complex Hg1−xCdxTe heterostructures.

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Section: Precursors' Measurements With Ir Gas Analysersupporting

confidence: 74%

Insight into precursor kinetics using an infrared gas analyser

Kłos

Piotrowski

Gawron

et al. 2010

Opto-Electronics Review

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“…The buffer plays also a role of Ga diffusion barrier. The interdiffused multilayer process (IMP) technique was applied for the HgCdTe deposition [6]. HgCdTe was grown at 350°C with mercury source kept at 210°C.…”

Section: Growth Of Hgcdte In Aix 200 Systemmentioning

confidence: 99%

“…Composition profiles versus thickness modelled from laser reflectance data for a portion of an MOCVD-IMP growth run for x = 0.23 HgCdTe at different times (reproduced from reference[6]). …”

mentioning

confidence: 99%

MOCVD Grown HgCdTe Heterostructures

Madejczyk¹,

Gawron²,

Kębłowski³

et al. 2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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HgCdTe heterostructures are widely applied for IR infrared detector constructing. Donor-and acceptor-doping . IntroductionMercury cadmium telluride Hg -x Cd x Te or MCT is a pseudobinary alloy whose development was commenced by Lawson and coworkers [ ]. HgCdTe ternary compound is an excellent material for infrared detectors construction. Its position is conditioned by following characteristics • tunable energy gap allowing to cover the µm wavelength range,• advantageous intrinsic recombination mechanisms that direct to higher operating temperature HOT ,

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“…10 Gas transport in the combined model is characterized by plug flow delay and the mixing tank time constant.…”

Section: Control Of Metal-organic Concentrationmentioning

confidence: 99%

“…Gas delivery is affected by delays and mixing effects. 10 Careful optimization of precursor transport conditions is necessary for growth of highquality material.…”

Section: Introductionmentioning

confidence: 99%

Metal-Organic Chemical Vapor Deposition of Hg1−x Cd x Te Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors

Piotrowski

Kłos

2007

Journal of Elec Materi

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Uncertainty in precursor pulse delays and shapes has been found to be an important factor in Hg 1-x Cd x Te metal-organic chemical vapor deposition (MOCVD) growth using the interdiffused multilayer process (IMP). Herein, metal-organic concentration changes in the growth zone are examined using an in situ infrared (IR) absorption gas monitoring system, and modifications to the interdiffused multilayer process are applied for in situ control of stoichiometry, improved morphology, minimized process length, and consumption of precursors. Dimethylcadmium (DMCd) introduction during IMP flush stages in HgTe was used for stoichiometry control. The final stage of heterostructure formation was optimized to prevent Hg outdiffusion. As a result, vacancy concentration was reduced far below the equilibrium level at the growth conditions so the background of n-type doping was revealed. Acceptor doping with arsine (AsH 3 ) and trisdimethylaminoarsenic (TDMAAs) was examined over a wide range of compositions, and doping levels of 5 · 10 15 cm -3 to 5 · 10 17 cm -3 were obtained. The presence of both arsenic dopants significantly increased the CdTe growth rate. This caused an increase of Cd mole fraction in the grown material. Doped heterostructures can be grown without any postgrowth anneal and used for mid-and long-wavelength infrared (MWIR and LWIR) devices operating at near-ambient temperatures.

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A model of the interdiffused multilayer process

Cited by 16 publications

References 19 publications

Insight into precursor kinetics using an infrared gas analyser

Insight into precursor kinetics using an infrared gas analyser

MOCVD Grown HgCdTe Heterostructures

Metal-Organic Chemical Vapor Deposition of Hg1−x Cd x Te Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors

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