2020
DOI: 10.3390/s20195554
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A Modeling and Feasibility Study of a Micro-Machined Microphone Based on a Field-Effect Transistor and an Electret for a Low-Frequency Microphone

Abstract: Miniaturized capacitive microphones often show sensitivity degradation in the low-frequency region due to electrical and acoustical time constants. For low-frequency sound detection, conventional systems use a microphone with a large diaphragm and a large back chamber to increase the time constant. In order to overcome this limitation, an electret gate on a field-effect transistor (ElGoFET) structure was proposed, which is the field-effect transistor (FET) mounted diaphragm faced on electret. The use of the se… Show more

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Cited by 5 publications
(6 citation statements)
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“…Typical capacitive microphones suffer from decreased performance at low frequencies, due to the reduction in air gap capacitance that results from the microphone's miniaturization. In order to overcome this limitation, the Electret Gate of Field-Effect Transistor (ElGoFET) microphone was introduced [22,75]. The ElGoFET device combines a field-effect transistor (FET), embedded in the diaphragm, and an electret; a displacement of the diaphragm due to the acoustic pressure leads to a change in the separation distance between the FET and the electret, which results in a change in the electric field across the air gap and, therefore, in a change in the FET drain-source current.…”
Section: Mems Microphones State-of-the-artmentioning
confidence: 99%
See 2 more Smart Citations
“…Typical capacitive microphones suffer from decreased performance at low frequencies, due to the reduction in air gap capacitance that results from the microphone's miniaturization. In order to overcome this limitation, the Electret Gate of Field-Effect Transistor (ElGoFET) microphone was introduced [22,75]. The ElGoFET device combines a field-effect transistor (FET), embedded in the diaphragm, and an electret; a displacement of the diaphragm due to the acoustic pressure leads to a change in the separation distance between the FET and the electret, which results in a change in the electric field across the air gap and, therefore, in a change in the FET drain-source current.…”
Section: Mems Microphones State-of-the-artmentioning
confidence: 99%
“…The ElGoFET device combines a field-effect transistor (FET), embedded in the diaphragm, and an electret; a displacement of the diaphragm due to the acoustic pressure leads to a change in the separation distance between the FET and the electret, which results in a change in the electric field across the air gap and, therefore, in a change in the FET drain-source current. As the sensitivity in ElGoFET transduction is dependent on the ratio of capacitive components in the transduction structure, high sensitivity can be achieved also at low frequency, even with a smaller air gap capacitance due to the miniaturization of the microphone [22,75].…”
Section: Mems Microphones State-of-the-artmentioning
confidence: 99%
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“…In non-resonant photoacoustic-based gas sensors 21,34 , because the photoacoustic pressure increases as the modulation frequency of the incident light decreases 35 , improving the SNR of sound detection at low frequencies results in a high SNR of these sensors. Unfortunately, for frequencies below 20 Hz, the SNR of conventional MEMS-based microphones decreases significantly as the sound frequency decreases [36][37][38][39] .…”
Section: Introductionmentioning
confidence: 99%
“…of these sensors. Unfortunately, for frequencies below 20 Hz, the SNR of conventional MEMS-based microphones decreases significantly as the sound frequency decreases [36][37][38][39] .…”
mentioning
confidence: 99%