2018
DOI: 10.1016/j.solener.2018.04.010
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A modeling study on utilizing SnS2 as the buffer layer of CZT(S, Se) solar cells

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Cited by 75 publications
(21 citation statements)
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“…The Mott–Schottky plot consists of the inverse square of the space-charge-layer capacitance ( C SC ) versus the bias potential. The slope of the plot represents the semiconductor donor density ( N D ), and extrapolation of intercept could be used to determine the flat band potential V fb using the familiar Mott–Schottky formula: in which N D , e , ε 0 , ε r , V fb , and V are carrier density, electron charge, vacuum permittivity, the dielectric constant of the semiconductor, flat band potential, and applied potential, respectively. T is the analysis temperature (300 K), k is the Boltzmann constant (1.38 × 10 –23 J/K), C SC is the space charge capacitance, and A stands for the film area in contact with the electrolyte.…”
Section: Resultsmentioning
confidence: 99%
“…The Mott–Schottky plot consists of the inverse square of the space-charge-layer capacitance ( C SC ) versus the bias potential. The slope of the plot represents the semiconductor donor density ( N D ), and extrapolation of intercept could be used to determine the flat band potential V fb using the familiar Mott–Schottky formula: in which N D , e , ε 0 , ε r , V fb , and V are carrier density, electron charge, vacuum permittivity, the dielectric constant of the semiconductor, flat band potential, and applied potential, respectively. T is the analysis temperature (300 K), k is the Boltzmann constant (1.38 × 10 –23 J/K), C SC is the space charge capacitance, and A stands for the film area in contact with the electrolyte.…”
Section: Resultsmentioning
confidence: 99%
“…The ability to fine-tune the cell volume and lattice parameters by varying the composition is noteworthy because it could be used to optimize the lattice match to other materials in a device structure. One example where this would be of value is in the recently reported use of SnS 2 in place of CdS as a buffer layer in Cu­(In 1– x Ga x )­Se 2 and Cu 2 ZnSn­(S 1– x Se x ) 4 solar cells. , The homogenous distribution of the chalcogen ions is also noteworthy as the microscopic interfaces introduced by preferential clustering could negatively affect the electronic/thermal transport and/or act as recombination centers for electrons and holes. Furthermore, the ability to accommodate the lattice strain induced by the cation substitution suggests that these materials may be relatively defect tolerant, with further implications for doping, for example, to improve electrical properties for thermoelectric applications. , …”
Section: Resultsmentioning
confidence: 99%
“…SnS 2 exhibits a high optical absorption coefficient and strong photoconductive properties in visible regions and this has given rise to increased interest due to its particular structure, suitable band gap (~2.2 eV), good chemical stability, low-cost and environmental friendliness [25]. Therefore, it has been widely used in many fields, such as lithium (sodium) ion batteries [26,27], solar cells [28,29], photocatalysis [30,31], field effect transistors [32,33], photodetectors [34,35,36], etc. Su et al [37] used chemical vapor deposition (CVD) to introduce metal seeds on the substrate to achieve high-quality SnS 2 thin film for location-selective synthesis, and the response time and quantum efficiency of the fabricated photodetector was ~5 microseconds and 11.3%, respectively.…”
Section: Introductionmentioning
confidence: 99%