A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories

Roca, M.; Laffont, R.; Micolau, G.; Lalande, F.; Pizzuto, O.

doi:10.1016/j.microrel.2009.06.036

Cited by 9 publications

(14 citation statements)

References 15 publications

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“…At high fields and low frequencies, the F–N regime will dominate, whereas in the low bias and high frequency regime, the M–A equation rules the conduction and also describes thermal effects. In this way, we can explain the attempts of some studies to introduce the temperature dependence on the field-emission mechanisms. − …”

Section: Resultsmentioning

confidence: 95%

End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications

et al. 2016

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We demonstrated the suitability of polymer composites filled with silicon carbide (SiC) powders derived from a recycling process for applications in electronic devices manufacturing. SiC powders have been synthesized from the process byproducts and used as fillers in the formulation of polystyrene (PS)/SiC composites, which have been used in the preparation of substrates using the solution-casting technique. Different substrates have been prepared by changing the concentration of SiC in the composite in the range from 6.7 to 67 wt % and used in simple electronic devices by performing gold contacts in both planar and stacked configurations. The electrical behaviors of both stacked and planar devices were investigated in direct current (DC) and alternate current (AC) regimes. The experimental results showed that charge percolation could be considered an explanation for the abrupt change in the differential conductivity observed around 30 wt %. Fowler-Nordheim tunneling at high fields has been found to be compatible with static characteristics and with high-frequency AC measurements and, therefore, charge tunneling between SiC islands has been proposed as the physical mechanism provoking the changes in charge transport in the substrates investigated. From this first experimental analysis, it appears that SiC/PS composites could suit their use in tunneling-gate dielectrics (i.e., in transistors suitable for their applications in nonvolatile random-access memory) for low concentrations or as a continuous semiconducting media when SiC is dispersed in high-concentration composites.

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Section: Resultsmentioning

confidence: 95%

End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications

et al. 2016

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“…Globally, the temperature influence on tunneling current has many sources and possible physical explanations. To keep a quite simple approach, we assumed that the tunneling current enhancement due to temperature increase is mainly caused by barrier height reduction, an assumption commonly made in the literature [25][26][27].…”

Section: A Tunneling Current Temperature Dependencementioning

confidence: 99%

EEPROM endurance degradation at different temperatures: State of the art TCAD simulation

Matteo¹,

Coulié²,

Simola

et al. 2022

Microelectronics Reliability

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“…Phosphorous donor concentration (N D ) in n + -polySi gate was 10 20 cm −3 . Details of device process flow are found elsewhere [8] . Current-voltage measurements were carried out by Hadjadj and co-workers [8] keeping p-Si in accumulation condition (negative bias on n + -polySi gate) at a wide range of temperatures between 25 and 300 °C.…”

Section: Device Detailsmentioning

confidence: 99%

“…FN tunneling current is a major concern for the reliability of MOS structures as well as for the functionality of electrically erasable programmable read-only memory (EEPROM) devices at room temperature [4] and also at elevated temperatures [7] . Therefore, since early 1970s FN tunneling mechanism has been received much attention by several researchers [2][3][4][5][6][7][8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of oxide thickness and temperature dependent current conduction in n⁺-polySi/SiO₂/p-Si structures — a new analysis

Samanta¹

2017

J. Semicond.

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The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density JG at high oxide fields Eox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

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A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories

Cited by 9 publications

References 15 publications

End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications

End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications

EEPROM endurance degradation at different temperatures: State of the art TCAD simulation

Mechanism of oxide thickness and temperature dependent current conduction in n⁺-polySi/SiO₂/p-Si structures — a new analysis

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A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories

Cited by 9 publications

References 15 publications

End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications

End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications

EEPROM endurance degradation at different temperatures: State of the art TCAD simulation

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

Contact Info

Product

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Mechanism of oxide thickness and temperature dependent current conduction in n⁺-polySi/SiO₂/p-Si structures — a new analysis