A modified cryostat for photo-electrical characterization of porous materials in controlled atmosphere at very low gas dosage

Cultrera, Alessandro; Amato, Giampiero; Boarino, Luca; Lamberti, Carlo

doi:10.1063/1.4894074

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…This suggests that condensation of ethanol already occurs in the pores at pressure values of the order of 1 mbar, relaxing the dielectric screening effects. At ethanol pressures one order of magnitude lower, this does not occur, as reported by Cultrera et al (2014), who observed the same Arrhenius-type behavior of the unexposed sample with decreasing temperature. When reaching the temperature for condensation, however, the sample conductivity jumps up by a factor of 5, confirming the viewpoint that relaxation of dielectric screening occurs upon pore condensation, solely (Figure 6.19).…”

Section: Effect Of Dielectric Confinementsupporting

confidence: 73%

Silicon Porosification: Approaches to PSi Parameters Control

2016

Porous Silicon: From Formation to Application: Formation and Properties, Volume One

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Section: Effect Of Dielectric Confinementsupporting

confidence: 73%

Silicon Porosification: Approaches to PSi Parameters Control

2016

Porous Silicon: From Formation to Application: Formation and Properties, Volume One

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“…Electrical measurements were performed in a modified cryostat (Janis ST-100H) [31], connecting the sample to a cold finger inserted in a vacuum chamber (∼10 -3 mbar). The temperature of the sample was measured using a platinum resistor (Pt-100) embedded into the cold finger.…”

Section: Device Fabrication and Electrical Characterizationmentioning

confidence: 99%

Metal–insulator transition in single crystalline ZnO nanowires

Milano¹,

D’Ortenzi²,

Ciubini³

et al. 2021

Nanotechnology

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In this work, we report on the metal–insulator transition and electronic transport properties of single crystalline ZnO nanowires synthetized by means of Chemical Vapor Deposition. After evaluating the effect of adsorbed species on transport properties, the thermally activated conduction mechanism was investigated by temperature-dependent measurements in the range 81.7–250 K revealing that the electronic transport mechanism in these nanostructures is in good agreement with the presence of two thermally activated conduction channels. More importantly, it was observed that the electrical properties of ZnO NWs can be tuned from semiconducting to metallic-like as a function of temperature with a metal-to-insulator transition (MIT) observed at a critical temperature above room temperature (T c ∼ 365 K). Charge density and mobility were investigated by means of field effect measurements in NW field-effect transistor configuration. Results evidenced that the peculiar electronic transport properties of ZnO NWs are related to the high intrinsic n-type doping of these nanostructures that is responsible, at room temperature, of a charge carrier density that lays just below the critical concentration for the MIT. This work shows that native defects, Coulomb interactions and surface states influenced by adsorbed species can significantly influence charge transport in NWs.

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“…Electrical measurements were performed in a customized cryostat (Janis ST-100H) [25] where the sample was connected to a cold finger by means of Cu wires ang Ag paste. The temperature of the sample was controlled by a Lake-Shore 331 temperature controller coupled with a heater and a liquid-nitrogen transfer line.…”

Section: Electrical Measurementsmentioning

confidence: 99%

Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts

2019

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Metal-semiconductor interfaces play a crucial role not only for regulating the electronic conduction mechanism but also in determining new functionalities in nanosized devices. In this work, we reported the investigation of the junction properties of single ZnO nanowires (NWs) asymmetrically contacted by means of a Pt electrochemically inert and a Cu electrochemically active electrode. At low applied voltages, these devices operate as diodes where the conduction mechanism was found to be dominated by the Schottky barrier at the Cu/ZnO interface. Junction parameters such as the Schottky barrier height, the ideality factor and the series resistance have been analyzed according to the thermionic emission theory. Different methods for parameter retrieval from I-V-T measurements are discussed and compared. A potential fluctuation model is considered in order to account for barrier inhomogeneities, revealing the presence of two Gaussian distribution of barrier heights. On the other hand, new device features arise from electrochemical dissolution and migration of Cu ions along the NW when high electric fields are implied. These electrochemical processes are underlaying the resistive switching and memristive behavior observed in single ZnO NWs, as suggested also by direct observation of Cu nanoclusters along the nanostructures after the switching events.

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A modified cryostat for photo-electrical characterization of porous materials in controlled atmosphere at very low gas dosage

Cited by 5 publications

References 27 publications

Silicon Porosification: Approaches to PSi Parameters Control

Silicon Porosification: Approaches to PSi Parameters Control

Metal–insulator transition in single crystalline ZnO nanowires

Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts

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